SI7302DN-T1-E3 Allicdata Electronics
Allicdata Part #:

SI7302DN-T1-E3-ND

Manufacturer Part#:

SI7302DN-T1-E3

Price: $ 1.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 220V 8.4A 1212-8
More Detail: N-Channel 220V 8.4A (Tc) 3.8W (Ta), 52W (Tc) Surfa...
DataSheet: SI7302DN-T1-E3 datasheetSI7302DN-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: $ 1.02000
10 +: $ 0.98940
100 +: $ 0.96900
1000 +: $ 0.94860
10000 +: $ 0.91800
Stock 1000Can Ship Immediately
$ 1.02
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 320 mOhm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Drain to Source Voltage (Vdss): 220V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Introduction

The SI7302DN-T1-E3 is a high performance MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for use in power supply applications. It is a single transistor with a drain-source voltage of up to 600 V, a maximum drain current of 24 A, a gate threshold voltage of 2.6V, and a gate-source capacitance of 53 nF. It is designed to be used in power applications such as motor control, battery powered devices, and high- efficiency LED lighting systems.

Applications

The SI7302DN-T1-E3 has many useful applications. It is designed to be used as a power switch in power supply applications. It can be used as an on/off switch or a variable voltage or current source. It is also excellent for use in motor control applications due to its high current handling capability and low switching losses. Additionally, it is often used in battery powered devices, like cell phones, where low power consumption and high efficiency is critical. Finally, due to its high switching speed and high efficiency, the SI7302DN-T1-E3 is often used for lighting applications, such as LED lighting systems.

Working Principle

The working principle of the SI7302DN-T1-E3 is fairly straightforward. The MOSFET is a voltage-controlled device that is composed of two regions, the source (S) and the drain (D). The source and drain form an electronic channel through which current can flow. To turn the device on, a voltage is applied between the gate (G) and source (S) electrodes. This causes a current to flow through the channel, which in turns controls the current flow through the device. If the gate voltage is removed, the device is turned off. The gate voltage can also be used to control the current flow through the device; by adjusting the gate voltage the current can be increased or decreased, allowing the SI7302DN-T1-E3 to be used as a variable voltage or current source.

Conclusion

The SI7302DN-T1-E3 is a powerful single MOSFET designed for use in power supply applications. It is versatile and can be used as an on/off switch or as a variable voltage or current source. It is also excellent for motor control, battery powered devices, and LED lighting systems due to its low power consumption, high efficiency, and high current handling ability. The working principle of the SI7302DN-T1-E3 is fairly straightforward; it is a voltage controlled device composed of two regions, the source (S) and the drain (D), that form an electronic channel through which current can flow. By adjusting the gate voltage the current flowing through the device can be modified, allowing the device to be used as a variable voltage or current source.

The specific data is subject to PDF, and the above content is for reference

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