| Allicdata Part #: | SI7302DN-T1-E3-ND |
| Manufacturer Part#: |
SI7302DN-T1-E3 |
| Price: | $ 1.02 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 220V 8.4A 1212-8 |
| More Detail: | N-Channel 220V 8.4A (Tc) 3.8W (Ta), 52W (Tc) Surfa... |
| DataSheet: | SI7302DN-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.02000 |
| 10 +: | $ 0.98940 |
| 100 +: | $ 0.96900 |
| 1000 +: | $ 0.94860 |
| 10000 +: | $ 0.91800 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | PowerPAK® 1212-8 |
| Supplier Device Package: | PowerPAK® 1212-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.8W (Ta), 52W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 645pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 320 mOhm @ 2.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.4A (Tc) |
| Drain to Source Voltage (Vdss): | 220V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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Introduction
The SI7302DN-T1-E3 is a high performance MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for use in power supply applications. It is a single transistor with a drain-source voltage of up to 600 V, a maximum drain current of 24 A, a gate threshold voltage of 2.6V, and a gate-source capacitance of 53 nF. It is designed to be used in power applications such as motor control, battery powered devices, and high- efficiency LED lighting systems.
Applications
The SI7302DN-T1-E3 has many useful applications. It is designed to be used as a power switch in power supply applications. It can be used as an on/off switch or a variable voltage or current source. It is also excellent for use in motor control applications due to its high current handling capability and low switching losses. Additionally, it is often used in battery powered devices, like cell phones, where low power consumption and high efficiency is critical. Finally, due to its high switching speed and high efficiency, the SI7302DN-T1-E3 is often used for lighting applications, such as LED lighting systems.
Working Principle
The working principle of the SI7302DN-T1-E3 is fairly straightforward. The MOSFET is a voltage-controlled device that is composed of two regions, the source (S) and the drain (D). The source and drain form an electronic channel through which current can flow. To turn the device on, a voltage is applied between the gate (G) and source (S) electrodes. This causes a current to flow through the channel, which in turns controls the current flow through the device. If the gate voltage is removed, the device is turned off. The gate voltage can also be used to control the current flow through the device; by adjusting the gate voltage the current can be increased or decreased, allowing the SI7302DN-T1-E3 to be used as a variable voltage or current source.
Conclusion
The SI7302DN-T1-E3 is a powerful single MOSFET designed for use in power supply applications. It is versatile and can be used as an on/off switch or as a variable voltage or current source. It is also excellent for motor control, battery powered devices, and LED lighting systems due to its low power consumption, high efficiency, and high current handling ability. The working principle of the SI7302DN-T1-E3 is fairly straightforward; it is a voltage controlled device composed of two regions, the source (S) and the drain (D), that form an electronic channel through which current can flow. By adjusting the gate voltage the current flowing through the device can be modified, allowing the device to be used as a variable voltage or current source.
The specific data is subject to PDF, and the above content is for reference
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SI7302DN-T1-E3 Datasheet/PDF