SI7392DP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7392DP-T1-GE3-ND

Manufacturer Part#:

SI7392DP-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 9A PPAK SO-8
More Detail: N-Channel 30V 9A (Ta) 1.8W (Ta) Surface Mount Powe...
DataSheet: SI7392DP-T1-GE3 datasheetSI7392DP-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 9.75 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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SI7392DP-T1-GE3 is a type of single-channel enhancement mode Field Effect Transistor (FET). It is a non-volatile, N-channel MOSFET, which uses a gate insulation layer between source and drain terminal to control the current flow. The transistor can be used in a wide variety of applications, such as in power circuits, switching applications and power supply switching. It has a low on-resistance and is suitable for high-current applications.

The SI7392DP-T1-GE3 is classified as a logic-level FET, since it operates at low voltages and currents. Its gate is driven by a voltage level and is fully on at higher logic levels. Its VGS rating is between 5V and 20V, and its VDS rating is between 20V and 55V. The FET also has a maximum drain current of 7.3A and a maximum power dissipation of 30W.

The transistor works by allowing or blocking the flow of current from the source to the drain depending on the gate voltage. When the gate is at a low voltage, it blocks current from the source to the drain, and is said to be “off”. When the gate voltage is at a higher logic level, it permits current to flow from the source to the drain and is said to be “on”.

This transistor can be used as a switch in many different scenarios. For example, it can be used in power supplies, in motor control applications, or in power circuits which have to switch high currents. In motor control applications, it can be used to drive a stepping motor. The transistor is suitable for low voltage and low current applications, and can switch up to a maximum current of 7.3A.

In power circuit applications, the transistor can be used to control the current flow. It can be used in on/off switching applications and in power supply switching applications. In such applications, the transistor operates as a switch, allowing current to flow when its gate voltage rises above the VGS rating, and blocking current when the gate voltage falls below the VGS rating.

The SI7392DP-T1-GE3 transistor is a versatile and reliable device. It is suitable for a wide range of applications and its low on-resistance makes it ideal for high-current applications. Its low VGS rating allows it to be used in low voltage and low current applications, while its VDS rating allows it to be used in high voltage and high current applications.

The specific data is subject to PDF, and the above content is for reference

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