Allicdata Part #: | SI7336ADP-T1-E3TR-ND |
Manufacturer Part#: |
SI7336ADP-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 30A PPAK SO-8 |
More Detail: | N-Channel 30V 30A (Ta) 5.4W (Ta) Surface Mount Pow... |
DataSheet: | SI7336ADP-T1-E3 Datasheet/PDF |
Quantity: | 30000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5.4W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5600pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI7336ADP-T1-E3 is a N-Channel PowerTrench® MOSFET designed to provide the best of both worlds in terms of performance and efficiency. It is the ideal choice for applications that require both high current handling capability, high switching frequency and low on-resistance. The SI7336ADP-T1-E3 is a level-shifted, N-Channel MOSFET which is suitable for a variety of applications including synchronous rectification, buck converters, battery charging, power management, motor control and switching power supplies. This device is engineered to provide higher efficiency and performance over a wide range of voltage and temperature range.
The SI7336ADP-T1-E3 has an internal gate-to-source charge pump, allowing the device to achieve high switching frequencies and very low on-resistance. This device operates in the depletion mode, enabling it to switch very quickly and with low on-resistance, resulting in improved efficiency and performance. The device also features an internal circuit protection to prevent the device from shorting and to prevent over-voltages and under-voltages.
The SI7336ADP-T1-E3 is a highly efficient and reliable N-Channel MOSFET, ideal for high-current applications, and with an ability to withstand high load currents without overheating. As an example of its efficiency, the SI7336ADP-T1-E3 can handle peak load currents in excess of 900A with very low on-resistance and very low power losses. It also features fast rise and fall times and high current carrying capabilities.
The SI7336ADP-T1-E3 is a highly versatile and robust device, and as such, suitable for a variety of applications. In addition to its applications in synchronous rectification, buck converters, power management, motor control, battery charging, and switching power supplies, this device is also used in high power lighting systems, RF power amplifiers, Class-D audio amplifiers, LCD displays and digital photo frames.
The SI7336ADP-T1-E3 is an ideal element when a low on-resistance, high current carrying capability, and fast response time is required. The device features a low gate capacitance, allowing it to switch much faster than other MOSFETs, reducing overall power losses and improving efficiency. Its ESD protection also adds another layer of reliability for the device, protecting it from electrostatic discharge and improving system safety substantially.
Furthermore, the SI7336ADP-T1-E3 is a level shifting device with the capability to shift its output voltage between different operating points. This wide-range voltage shifting capability makes it a perfect choice for applications that require a different input and output voltages. This feature helps reduce system losses and further increases the efficiency of the device.
The SI7336ADP-T1-E3 is a well-rounded device that can handle a wide range of current levels and switching frequencies, while providing protection against short-circuiting and over-voltages. It is the ideal solution for applications that require low on-resistance, high current carrying capability, and fast response times.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI7366DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 13A PPAK ... |
SI7302DN-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 220V 8.4A 121... |
SI7356ADP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SI7356ADP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SI7358ADP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 14A PPAK ... |
SI7358ADP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 14A PPAK ... |
SI7368DP-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 13A PPAK ... |
SI7368DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 13A PPAK ... |
SI7380ADP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SI7380ADP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 40A PPAK ... |
SI7382DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 14A PPAK ... |
SI7388DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 12A PPAK ... |
SI7388DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 12A PPAK ... |
SI7392ADP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 30A PPAK ... |
SI7392ADP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 30A PPAK ... |
SI7392DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 9A PPAK S... |
SI7392DP-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 9A PPAK S... |
SI7344DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 11A PPAK ... |
SI7366DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 13A PPAK ... |
SI7382DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 14A PPAK ... |
SI7309DN-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 8A 1212-8... |
SI7315DN-T1-GE3 | Vishay Silic... | -- | 9000 | MOSFET P-CH 150V 8.9A 121... |
SI7309DN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 8A 1212-8... |
SI7370DP-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 9.6A PPAK... |
SI7317DN-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET P-CH 150V 2.8A 121... |
SI7308DN-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 60V 6A 1212-8... |
SI7322DN-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 18A PPAK... |
SI7370DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 60V 9.6A PPAK... |
SI7326DN-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 6.5A PPAK... |
SI7322ADN-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 15.1A 12... |
SI7326DN-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 6.5A PPAK... |
SI7308DN-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 6A 1212-8... |
SI7386DP-T1-E3 | Vishay Silic... | -- | 12000 | MOSFET N-CH 30V 12A PPAK ... |
SI7386DP-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 30V 12A PPAK ... |
SI7322DN-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET N-CH 100V 18A 1212... |
SI7336ADP-T1-GE3 | Vishay Silic... | -- | 69000 | MOSFET N-CH 30V 30A PPAK ... |
SI7336ADP-T1-E3 | Vishay Silic... | -- | 30000 | MOSFET N-CH 30V 30A PPAK ... |
SI7384DP-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 11A PPAK ... |
SI7328DN-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 35A PPAK ... |
SI7370ADP-T1-GE3 | Vishay Silic... | 0.76 $ | 1000 | MOSFET N-CH 60V 50A PPAK ... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...