| Allicdata Part #: | SI7386DP-T1-E3TR-ND |
| Manufacturer Part#: |
SI7386DP-T1-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 30V 12A PPAK SO-8 |
| More Detail: | N-Channel 30V 12A (Ta) 1.8W (Ta) Surface Mount Pow... |
| DataSheet: |  SI7386DP-T1-E3 Datasheet/PDF |
| Quantity: | 12000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | PowerPAK® SO-8 |
| Supplier Device Package: | PowerPAK® SO-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta) |
| FET Feature: | -- |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 4.5V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 7 mOhm @ 19A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Since its inception, the SI7386DP-T1-E3 has become a popular choice for those in the field of transistors, FETs, and MOSFETs. This component single transistor is a part of the extended family of Vishay silicon carbide, and it is a great choice for applications that require high current switching, low capacitance, and high voltage capability. The operating temperature range for this component is 125°C for the X1 series and 105°C for the X3 series. In order to understand the principles of operation in this component, one must know how it works. Working Principle and Construction The SI7386DP-T1-E3 is a single transistor that contains a number of internal parts and components. To understand how it works, one must first understand its basic components. First, there is the gate, which is the control electrode that allows current to pass through the transistor. The gate is connected to two other electrodes: the source and the drain. The source can be considered the inlet, while the drain is the outlet. The SI7386DP-T1-E3 also contains a wafer substrate, which is a semi-insulating material that provides a path for current to travel across. The way that the SI7386DP-T1-E3 works is by controlling the amount of current that passes through the gate electrode. When a small voltage is applied to the gate, a large electric field is created, which weakens the barriers between the source and drain and allows electrons to flow between them. When the gate voltage is increased, the electric field gets stronger, which increases the current flow. When the voltage is decreased, the electric field weakens and the current flow decreases. Application Field The SI7386DP-T1-E3 is used in a variety of applications, including power management and communication circuits. Its ability to handle large currents makes it a great choice for applications that require high power. It is also used in DC-DC power supplies, as its high voltage capability allows it to be used in circuits that require high current. The SI7386DP-T1-E3 is also used in automotive electronics, motion detectors, and laser printers. Its low capacitance makes it a great choice for electronic timing circuits, allowing them to work quickly and accurately. It is also used in high frequency circuits, due to its high frequency operation. Conclusion The SI7386DP-T1-E3 is a great choice for those in the field of transistors, FETs, and MOSFETs. It is well suited for applications that require high current switching, low capacitance, and high voltage capabilities. Its wide range of applications, from power management to automotive electronics, make it a popular choice for many applications.