SI7344DP-T1-E3

Vgs(th) (Max) @ Id:	2.1V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.8W (Ta)
FET Feature:	--
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	8 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	11A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Transistors - FETs, MOSFETs - SingleThe SI7344DP-T1-E3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is an ideal choice for low-side and high-side switching applications. It is part of the Smart Power Selector family from Vishay Siliconeix and is designed to provide the maximum current carrying capability and switching performance in the most extreme operating conditions.The SI7344DP-T1-E3 has a wide range of applications and is designed to satisfy the needs of a variety of industries. It can be used in automotive, industrial, telecommunication, consumer, and computer applications. It is also suitable for power management in both analog and digital circuits.The SI7344DP-T1-E3 is a dual-channel device with integrated gate drivers, which provides combination of low on-resistance and high current-carrying capability. It is designed to be used in high-power switch applications, allowing the user to control two independent switches at the same time. It is also capable of switching both high and low side loads with a single control signal.The SI7344DP-T1-E3 is an innovative device with an integrated gate-driver that can accept control signals from 0 - 2.0 volts VDD, giving it the ability to handle a wide range of applications. It is also equipped with a low drain-to-source on-resistance of 50 milliohms and a maximum output current of 8 amps, making it ideal for applications requiring high power switching.The working principle of the SI7344DP-T1-E3 is based on the MOSFET\'s ability to control a large amount of current with a small amount of voltage. It works by having the voltage applied to the gate terminal, which turns the MOSFET on and off. When the MOSFET is on, the current travels through the transistor. When it is off, the current is blocked. To sum up, the SI7344DP-T1-E3 is an innovative metal-oxide-semiconductor field-effect transistor that is designed to provide the maximum current carrying capability and switching performance in the most extreme operating conditions. It has a wide range of applications, including automotive, industrial, telecommunication, consumer and computer applications. It is also suitable for power management in both analog and digital circuits. The SI7344DP-T1-E3 has an integrated gate-driver, which allows it to accept control signals from 0 - 2.0 volts VDD, and provide a low on-resistance of 50 milliohms and a maximum output current of 8 amps. Furthermore, it works by having the voltage applied to the gate terminal, which turns the MOSFET on and off.

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