Allicdata Part #: | SI7392DP-T1-E3-ND |
Manufacturer Part#: |
SI7392DP-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 9A PPAK SO-8 |
More Detail: | N-Channel 30V 9A (Ta) 1.8W (Ta) Surface Mount Powe... |
DataSheet: | SI7392DP-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 9.75 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI7392DP-T1-E3 is one of the advanced semiconductor devices developed by United Silicon Corporation. SI7392DP-T1-E3 is a single element, four-channel, N-channel MOSFET (metal–oxide–semiconductor field-effect transistor) with an integrated overvoltage and overcurrent protection feature. The device is designed to provide a long-term, reliable, and efficient solution for power system interface and protection applications.
As an N-channel MOSFET, SI7392DP-T1-E3 consists of four independent transistors and a gate driver, which have a very low on-resistance for wide current range and low switching losses. The integrated protective circuit is capable of providing overvoltage and overcurrent protection, as well as thermal shutdown protection. This combination helps to provide long-term stability and maintain optimal working state of the system.
Applications of SI7392DP-T1-E3
The SI7392DP-T1-E3 MOSFET is widely used in various power application fields, such as:
- Automotive and industrial energy conversion systems,
- Power module inverters,
- On-board and off-board battery charging solutions,
- Power module DCDC converters and chargers,
- Power supply circuits,
- Solar power systems.
Working Principle of SI7392DP-T1-E3
The working principle of SI7392DP-T1-E3 is quite simple and easy to understand. This MOSFET is a four-channel device, so it consists of four transistors connected in parallel. When the gate drive voltage is applied, the transistor is turned on and the current flows through it. The integrated protection feature is activated to protect the device from overvoltage and overcurrent conditions.
The SI7392DP-T1-E3 is able to provide maximum current of 100mA and maximum voltage of 30V. It also has very low on-resistance which helps in minimizing the switching losses and ensuring efficient operation. The built-in thermal shutdown feature provides protection against temperature overage, hence ensuring long-term reliability of the system.
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