SI7384DP-T1-E3 Allicdata Electronics
Allicdata Part #:

SI7384DP-T1-E3TR-ND

Manufacturer Part#:

SI7384DP-T1-E3

Price: $ 0.81
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 11A PPAK SO-8
More Detail: N-Channel 30V 11A (Ta) 1.8W (Ta) Surface Mount Pow...
DataSheet: SI7384DP-T1-E3 datasheetSI7384DP-T1-E3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.73356
Stock 1000Can Ship Immediately
$ 0.81
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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The SI7384DP-T1-E3 is a single P-Channel Enhancement Mode Power MOSFET. Operating in Enhancement Mode, which enables the source-drain conduction when a negative gate-to-source voltage is applied, it is manufactured by SIPEX Semiconductor Company. This MOSFET is designed to minimize on-state resistance and make the device capable of operating in high temperature environments with outstanding power flow.

The SI7384DP-T1-E3 offers a wide array of benefits such as lower charging time, low threshold voltage, better punch-through performance, high current gain and high temperature operation. It is also cost-efficient and its ability to offer low on-state resistance makes it the ideal choice for high current delivery. Additionally, the MOSFET features a good breakdown voltage with a wide range of threshold voltage variations.

The SI7384DP-T1-E3 is a suitable choice for automotive applications, power supplies, UPS systems, light loads and applications which require high switching current flow with low on-state resistance. Its stable physical and electrical characteristics also make it excellent for use in portable electronics such as cell phones, PDAs, and laptop computers.

The working principle of the SI7384DP-T1-E3 revolves around the movement of charges between the gate, source and drain terminals. When a negative potential is applied to the gate, the MOSFET enters the active region and creates a channel between source and drain. The size of this channel determines the current flow between the source and drain. The MOSFET also features an internal capacitance to control the gate-source voltage and amplify the signal.

The SI7384DP-T1-E3 is a highly efficient device with excellent power handling capability and low on-state resistance. It is ideal for use in various high-frequency applications such as audio amplifiers, motor speed and torque control, DC-to-DC converters and load switches. Its cost-effective and robust design makes it the best choice for a variety of applications in the automotive and consumer electronics industries.

The specific data is subject to PDF, and the above content is for reference

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