SI7358ADP-T1-E3

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.9W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4650pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	40nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	4.2 mOhm @ 23A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	14A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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SI7358ADP-T1-E3 is a low-power MOSFET that is most commonly used in automotive applications. It is a single, surface-mountable P-channel enhancement mode MOSFET with excellent on-delay characteristics. The device is highly integrated and offers excellent performance in an easy to use package.The SI7358ADP-T1-E3 is designed to provide a low on-resistance, wide operating temperature range, and excellent reliability for automotive power management. It is fast switching, with a balanced on and off state, and can be used in a variety of automotive applications such as automotive lighting, automotive battery management, power window actuators, and keyless entry systems.The SI7358ADP-T1-E3 operates by controlling the flow of current through the source-gate-drain channel, using the input/output (I/O) threshold as a reference. When the gate-source voltage is higher than the I/O threshold, the device turns on and delivers current to the load. When the gate-source voltage is lower than the I/O threshold, the device turns off and isolates the load from the power supply.The device consists of a low RDS(on) P-channel power MOSFET, which is shielded by a back-body diode from any reverse-polarity conditions. This back-body diode is designed to limit the maximum current that can flow through the device, making it a highly reliable device. Additionally, the device also has a high (soft) break-over current limit to protect the load from any over-current conditions.The low on-resistance of the SI7358ADP-T1-E3 makes it a great choice for automotive applications that need fast response time and low power dissipation. The device has a gate threshold voltage of -3V and a drain leak current of 0.1uA. This ensures that the device can be used in a wide variety of applications and that it is highly reliable in operation.The SI7358ADP-T1-E3 is also very easy to use, with its simple I/O design. It comes in a small package and is RoHS compliant. It is compatible with a variety of circuits and can be used in several different power management applications. It can also be used with a variety of different logic levels, such as TTL, CMOS, and more.In conclusion, the SI7358ADP-T1-E3 is a great MOSFET for a wide variety of automotive applications. It is fast switching, with a low on-resistance and an I/O design that makes it very easy to use. It offers excellent reliability and performance in an easy to use package. Its low power dissipation and back-body diode also ensure its reliability even in conditions where other MOSFETs fail.

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