SI7370DP-T1-E3

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.9W (Ta)
FET Feature:	--
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	57nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	11 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	9.6A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction
SI7370DP-T1-E3 is a power MOSFET from Vishay Siliconix. This solution is ideal in applications such as mobile radios, solid state switches, and power converters. This device has a minimum gate threshold voltage of 4 volts, a gate to source voltage of -5V and <50mA gate current. It uses with power dissipation of 75W, RDS(on) of 1.4ohms and a drain to source current of 75A. This device can operate at temperatures up to 175°C, making it suitable for extreme operational conditions. Its maximum dielectric withstand voltage is 45V.The SI7370DP-T1-E3 is classified as a Single MOSFET, a type of power transistor. It belongs to the FET family of transistors, a kind of transistor that uses the prescence of voltage to control the flow of current through a conducting channel, instead of the current flow controlling the voltage.Working Principle
The Single MOSFET is basically like a switch, a two-terminal device that can be either open or closed, depending on the voltage applied to it. When the MOSFET switch is open, no current can flow from its Drain to Source, and when it is closed, current can flow from DrainA MOSFET is composed of a gate, a source and a drain. A voltage applied between the gate and the source creates a field effect, which will control the current flowing from the source to the drain. First, the voltage between the gate and the source must be higher than the threshold voltage, V_th, which is 4V for the SI7370DP-T1-E3. When this voltage, V_gs, is greater than the threshold voltage, a conductive channel is created between the drain and the source and current can flow. This is known as the “on” state of the transistor. The voltage between drain and source, V_ds, is determined by the threshold voltage and the gate to source voltage, V_gs.Applications
The SI7370DP-T1-E3 Single MOSFET has a wide range of applications, such as mobile radios, solid state switches and power converters.Mobile radios use the power MOSFET as part of the circuit design to switch the transmission and reception signals. This resembles a semiconductor switch, which is capable of channeling signals between the radio and the antenna.Solid state switches are used to control high power circuits without the need for bulky mechanical switches. The transistor’s ability to control large currents with low gate drive power makes the SI7370DP-T1-E3 Single MOSFET an ideal candidate for such applications.Power converters are electronic devices capable of converting one type of electrical energy into another, playing an important role in modern electronics. The SI7370DP-T1-E3 is used as a key component in power conversion circuits.In addition, the SI7370DP-T1-E3 is also suitable for use in high power amplifier circuits. It’s fast switching speed and low gate drive power makes it an ideal choice for such applications.Summary
The SI7370DP-T1-E3 Single MOSFET is a power MOSFET with a wide range of applications, such as mobile radios, solid state switches, power converters and high power amplifier circuits. It has a minimum gate threshold voltage of 4V, a gate to source voltage of -5V and a drain to source current of 75A. Its power dissipation is 75W and its maximum dielectric withstand voltage is 45V. The device can operate at temperatures up to 175°C.The SI7370DP-T1-E3 is a FET device, a transistor that uses the prescence of voltage to control the flow of current through a conducting channel, instead of the current flow controlling the voltage. It is composed of a gate, a source and a drain, and a voltage between the gate and the source creates a field effect which controls the current flow.

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