SI7326DN-T1-GE3 Discrete Semiconductor Products

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The SI7326DN-T1-GE3 is a single N-channel 30-V (D-S) MOSFET that features an advanced high-voltage technology. It is optimized for VIN up to 30V. The highly reliable silicon-gate MOSFET process and rugged design circuitry ensure low on-resistance and fast switching performance. The device has no reverse blocking capability, so it must be used with a protection diode. The SI7326DN-T1-GE3 can be used to drive loads up to 10A, making it an ideal choice for high-current, high-speed switching applications.

The SI7326DN-T1-GE3 is suitable for applications such as power management in notebook computers and similar portable devices, AC/DC converters and DC/DC converters, and other extreme high-voltage, high-current applications. It can also be used to provide power management in various consumer electronics, automotive, and industrial applications. The device has a breakdown voltage of 32 V and a source-drain diode voltage of approximately 0.5 V. The device is available in a small plastic package (SOIC-8) or a space-saving, power-saving, low-profile profile PowerFLAT-5 package.

There are two basic types of transistors: junction field-effect transistors (JFETs) and metal-oxide-semiconductor field-effect transistors (MOSFETs). The SI7326DN-T1-GE3 is a type of MOSFET. MOSFETs are so named because their substrates are typically made from metal oxide semiconductor (MOS) material, such as polycrystalline silicon. A MOSFET commonly consists of three layers: the source, the drain, and the gate. The source is the entry point for the electricity, the drain is the exit point, and the gate is like a valve that can be opened or closed to allow or restrict the flow of electricity. Gate control of the source-drain current is facilitated by a "channel" in the substrate that can be opened or closed by applying gate voltage.

The SI7326DN-T1-GE3 is a single n-channel MOSFET. This means that the channel can only be opened or closed by applying a negative voltage to the gate. When the voltage is applied, a channel opens and current flows from source to drain. When the voltage is removed, the channel is closed and current stops flowing. The SI7326DN-T1-GE3 has a maximum drain-source voltage (VDS) of 30 V and a maximum drain current (ID) of 10 A, making it suitable for high-current, high-voltage applications.

The SI7326DN-T1-GE3 is a highly reliable device, due to its silicon-gate MOSFET process and rugged design circuitry. It has an on-resistance of 4 milliohms and a low gate-to-drain capacitance of 10 pF. The device also has a fast switching time of 12 ns and a low Power-On Resistance of 6 milliohms.

In conclusion, the SI7326DN-T1-GE3 is a single N-channel 30-V (D-S) MOSFET. It is optimized for VIN up to 30 V and can drive loads up to 10A, making it suitable for high-voltage, high-current applications such as power management in portable devices, AC/DC converters, and DC/DC converters. The device features a silicon-gate MOSFET process and rugged design circuitry for low on-resistance and fast switching performance. It has an on-resistance of 4 milliohms, a fast switching time of 12 ns, and a low Power-On Resistance of 6 milliohms.

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