SI7309DN-T1-E3 Discrete Semiconductor Products

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The SI7309DN-T1-E3 is a single N-channel MOSFET with an internal Drain-Source diode and a maximum Drain-Source voltage of 100 V. It is designed for applications requiring high speed switching and over-voltage protection such as low voltage motor control, and motor control equipment. It can also be used for high gain and high speed amplifier circuits.

The SI7309DN-T1-E3 is a surface-mountable, RoHS-compliant device with a peak Drain-Source current of 10 A and a Package-Gate charge of 2 pF. It features excellent on-state voltage blocking and unclamped energy ratings, making it ideal for applications with limited space. It also offers high drain to source voltage capability, high switching speed and low on-resistance.

The SI7309DN-T1-E3 features an internal Gate-Source diode and a maximum Drain-Source voltage of 100 V. It is designed for applications requiring high speed switching and over-voltage protection such as low voltage motor control, and motor control equipment. By using the device, designers can minimize power losses and reduce overall system cost.

The SI7309DN-T1-E3 works on the principle of enhancement-type MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It has a three-terminal structure comprising a Source, Gate and Drain. The Gate-Source junction acts as an insulated gate and when its input is driven by an appropriate voltage, the drain current flows proportionately to the Gate voltage. The N-channel MOSFET features improved power conversion efficiency and operates at a low voltage, making it suitable for applications with limited space.

For proper operation of the SI7309DN-T1-E3, it is important to start with proper selection and placement of components on the PCB. The Gate-Source voltage of the device should never be higher than -0.5V and the Drain-Source voltage should not exceed +100V. The Gate-Source and Drain-Source Voltage must be within the safe operating range to avoid premature device failure or danger of over current.

The applications of the SI7309DN-T1-E3 include high gain and high speed amplifier circuits, low voltage motor control, motor control equipment, over-voltage protection and high speed switching. Its internally isolated Gate-Source junction can also be used for high-frequency switching signals and pulse-width modulation tasks.

In conclusion, the SI7309DN-T1-E3 is a single N-channel MOSFET containing an internalDrain-Source diode. It offers high speed switching, low on-resistance and high drain to source voltage capability, making it ideal for applications with limited space. It is suitable for use in low voltage motor control, motor control equipment and various other applications requiring high gain and high speed switching.

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