SI7388DP-T1-GE3

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The SI7388DP-T1-GE3 is a Silicon N-Channel Enhancement-Mode Power MOSFET, developed by Vishay Intertechnology. The device is an high voltage, low RDS(on), low gate charge, fast switching power MOSFET optimized for high efficiency, high frequency switch-mode power supply (SMPS) applications.

The power MOSFET is specifically designed to minimize the on-state resistance while providing superior switching performance. The dynamic performance of the device is designed to provide improved switching efficiency and power dissipation, while allowing for improved circuit board design flexibility. The device also features a current-regulated body diode for short-circuit protection.

The SI7388DP-T1-GE3 is capable of operating in both continuous and discontinuous mode. In continuous mode, the power MOSFET is designed to minimize the conduction losses in order to improve efficiency. In discontinuous mode, the device is designed to minimize the switching frequency in order to optimize the circuit board size. In both modes, the device is designed to provide excellent thermal performance.

The operating principle of the SI7388DP-T1-GE3 is based on the basic principle of field effect transistors. An electric potential applied to the gate of the device will cause a current to travel through the drain and source, modulated by the applied gate charge. This gate charge is usually provided by an external circuit, such as a power supply or a resistor-capacitor network, and will control the conductivity of the device by controlling the amount of current that is flowing through the device.

As well as offering excellent switching performance and thermal performance, the SI7388DP-T1-GE3 is also capable of high frequency operation, making it ideal for applications such as switching power supplies and motor control applications. Additionally, the device is suitable for high power applications, such as automotive and industrial applications where high power switching is required.

In conclusion, the SI7388DP-T1-GE3 is an efficient, high frequency, fast switching N-channel enhancement-mode power MOSFET. The device is optimized for high efficiency, high frequency switch-mode applications and is suitable for both continuous and discontinuous mode operation. Additionally, the device offers excellent thermal performance and is suitable for high power applications.

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