Allicdata Part #: | SI7380ADP-T1-GE3-ND |
Manufacturer Part#: |
SI7380ADP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 40A PPAK SO-8 |
More Detail: | N-Channel 30V 40A (Tc) 5.4W (Ta), 83W (Tc) Surface... |
DataSheet: | SI7380ADP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5.4W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7785pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 185nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI7380ADP-T1-GE3 is a type of power field-effect transistor (FET) designed for use as a JFET-input enhancement-mode MOSFET in a variety of applications. It is manufactured by Siemens and offers superior performance and reliable operation. The FET can handle high voltages up to 800 V and is able to dissipate up to 3A of continuous power. It features a P-channel enhancement-mode MOSFET structure and an SOT-223 package.
The SI7380ADP-T1-GE3 is a popular choice for power management solutions because it offers high current handling capability, low on-resistance, and is relatively fast-switching. It can be used to control switching speed, provide switching reliability, minimize losses, and reduce system noise.
One of the most common applications for this FET is as a gate driver for high-side and low-side power switches. It can be used as a logic gate to control the voltage and current supplied to a load or device. For example, it can be used as a control switch for power MOSFETs and IGBTs, allowing for fast switching between on and off states. It can also be used for low-loss DC-to-DC conversions and for use as a blocking or level-shifting device.
The operation of the SI7380ADP-T1-GE3 is based on the principle of the MOSFET. It consists of a channel formed between the drain and the source. By applying a voltage to the gate, the current can be switched on and off by modulating the electrical field across the channel. When a positive voltage is applied to the gate, the electrons in the channel are attracted to the gate and the channel becomes conductive, allowing current to flow between the drain and the source. Conversely, when a negative voltage is applied to the gate, the channel is blocked and no current can flow.
The SI7380ADP-T1-GE3 has a number of advantages compared to other power FETs. It is relatively easy to design with, as it only requires one external component for operation. It also has low on-resistance, good thermal performance, and is fast switching. It is also low-noise, which is important for any application where noise can be an issue. Finally, it is available in a SOT-223 package, which is space efficient and easy to mount.
In summary, the SI7380ADP-T1-GE3 is a versatile, high-performance FET for use in a variety of power management solutions. It is capable of high-voltage operation, low-losses, and fast switching, and is relatively easy to design with. It is commonly used as a gate driver for power MOSFETs and IGBTs, as well as for level-shifting and DC-to-DC conversion. Its low-noise, compact package makes it well-suited for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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