SI7328DN-T1-E3 Allicdata Electronics
Allicdata Part #:

SI7328DN-T1-E3-ND

Manufacturer Part#:

SI7328DN-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 35A PPAK 1212-8
More Detail: N-Channel 30V 35A (Tc) 3.78W (Ta), 52W (Tc) Surfac...
DataSheet: SI7328DN-T1-E3 datasheetSI7328DN-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.78W (Ta), 52W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2610pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 31.5nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 18.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7328DN-T1-E3, from Vishay Siliconix, is a P-channel enhancement-mode MOSFET with a low on-resistance and high switching speed. It is a device designed for power management in DC/DC converters, low-side switching applications, load switches, DC/AC inverters, or other common applications. As its logic level gate drive allows the voltage to be reduced to VGS = 0.8 V, the SI7328DN-T1-E3 is ideal for use in portable devices that require low input voltages. Additionally, this device features very low on-resistance, fast switching speed, and a wide body of safe operating area.

The SI7328DN-T1-E3 features a wide range of applications in diverse power management fields. It is typically used in DC/DC converters, needs low on-resistance, and fast switching speed. This device is ideal for the power supply system of mobile phones, Tablet PCs, PDA, and other portable devices. Moreover, the SI7328DN-T1-E3 can be used in load switches, DC/AC inverters, and low-side switching applications.

The working principle of the SI7328DN-T1-E3 is relatively simple. It consists of a drain, source, and gate electrodes. When the gate voltage is at or below the threshold voltage applied, the device can be turned off, thus no current can flow between source and drain. When the gate voltage exceeds the threshold voltage, the device turns on, and current begins to flow, and the on-resistance of the device is determined by gate-source voltage.

In summary, the SI7328DN-T1-E3 is a P-channel enhancement-mode MOSFET that can be used in low-side switching applications, DC/DC converters, load switches, and DC/AC inverters. It is an ideal device for portable applications that require low input voltages as its logic level gate drive allows the voltage to be reduced to VGS = 0.8V. Additionally, this device features very low on-resistance, fast switching speed, and a wide body of safe operating area.

The specific data is subject to PDF, and the above content is for reference

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