SI7374DP-T1-E3 Allicdata Electronics
Allicdata Part #:

SI7374DP-T1-E3TR-ND

Manufacturer Part#:

SI7374DP-T1-E3

Price: $ 1.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 24A PPAK SO-8
More Detail: N-Channel 30V 24A (Tc) 5W (Ta), 56W (Tc) Surface M...
DataSheet: SI7374DP-T1-E3 datasheetSI7374DP-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: $ 1.22000
10 +: $ 1.18340
100 +: $ 1.15900
1000 +: $ 1.13460
10000 +: $ 1.09800
Stock 1000Can Ship Immediately
$ 1.22
Specifications
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 56W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 23.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7374DP-T1-E3 is a low-voltage, low-power, single-channel N-type depletion-mode vertical MOSFET, which has a number of useful applications and is useful in a variety of electronic components. This type of device is commonly used in a variety of electronic circuits, such as audio amplifiers, switching regulators, and amplifier circuits. The SI7374DP-T1-E3 is suitable for use in applications such as audio, video, and automotive applications.

The SI7374DP-T1-E3 is a versatile device, and its structure and electrical characteristics make it suitable for many types of applications. The device has an on-resistance of less than 20 milliohms, an operating temperature range from -55 °C to 150 °C, and a maximum voltage rating of 30V. The device also has a fast switching speed, with a maximum breakdown voltage of 1.2V and a minimum switching voltage of 0.8V. The device is also capable of handling high current levels and is suitable for a variety of high-power loads.

The SI7374DP-T1-E3 is a very useful device in a variety of applications, including being used as a driver in power supplies, as a switch in power circuits and audio systems, and as an amplifier in signal processing circuits. The device is also used in a variety of systems such as mobile phones, handheld computers, and automotive systems. It is also used in a variety of high-frequency and RF applications.

The SI7374DP-T1-E3 works on the principle of the MOSFET, which utilizes an insulated gate and a source and drain to control current flow. When the gate is switched from one position to the other, current flows from the source to the drain. This current is then amplified and can be utilized for a variety of functions including switching, amplification, voltage conversion, and power control.

In order to use the SI7374DP-T1-E3, the device must be connected to a circuit through its source, gate and drain. This connection is usually done using a standard circuit board. The gate is then connected to a voltage source, while the source and drain are connected to the circuit elements. Once the device is connected to the circuit, the voltage applied to the gate can be used to control the current flow from the source to the drain. The device can then be used to switch, amplify, convert, or control power.

The SI7374DP-T1-E3 has a wide range of uses and applications, which makes it a popular choice for many types of electronic components. Its low cost and small size make it ideal for use in a wide range of projects and applications, from automotive to audio, video, and power systems. The device also provides excellent performance characteristics, making it suitable for use in a wide range of high-power, high-frequency, and RF applications.

The specific data is subject to PDF, and the above content is for reference

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