SI7308DN-T1-GE3 Discrete Semiconductor Products

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The SI7308DN-T1-GE3 is a highly efficient, single N-channel IGBT designed for use in industrial, consumer, and automotive applications. It offers a variety of features for robust operation and an optimized high speed switching performance. Designers often choose SU7308DN-T1-GE3 IGBTs over MOSFETs when designing high-performance applications such as motor control, power switching, and battery management systems. Due to its low on-state voltage (< 900mV) and low switching losses (< 300mV), it is ideal for low voltage applications such as LED drivers, power supplies, and automotive LED headlight systems. The SI7308DN-T1-GE3 offers a feature set that ensures reliable operation in a wide range of applications. It has an optimized gate drive to improve driver performance, providing enhanced turn-on and turn-off times for improved power management. The device also features a linear on-state voltage drop for reduced power dissipation and improved efficiency. Additionally, the device is protected from parasitic loading due to an integrated body diode clamp. The working principle of the SI7308DN-T1-GE3 is based on insulated-gate bipolar transistor (IGBT) technology. An IGBT is a three-terminal power semiconductor device which combines the characteristics of both a standard MOSFET and a BJT. The gate terminal of the IGBT allows for gate bias control of charge carriers and offers high input impedance due to its insulated gate. When sufficient voltage is applied to the gate, the device turns on, allowing the current to flow between collector and emitter. This high speed, low on-state voltage IGBT features lead-free terminations to comply with environmental demands. It is well-suited for a wide range of applications, including motor control, power switching, frequency converters, and automotive applications. The SI7308DN-T1-GE3 is available in a surface mount miniature package and can operate between -55 and 150 degrees Celsius. In conclusion, the SI7308DN-T1-GE3 is a single N-channel IGBT designed for use in industrial, consumer and automotive applications. The device has a low on-state voltage (< 900mV) and low switching losses (< 300mV) which makes it ideal for low voltage applications. It is based on insulated-gate bipolar transistor (IGBT) technology and offers an optimized gate drive for improved driver performance. The SI7308DN-T1-GE3 is available in a surface mount miniature package and can operate between -55 and 150 degrees Celsius. 

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