SI7382DP-T1-GE3

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.8W (Ta)
FET Feature:	--
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	40nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	4.7 mOhm @ 24A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	14A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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When thinking of a comprehensive range of high-performance transistors, the SI7382DP-T1-GE3 is an ideal choice. This device from the industry-leading manufacturer, Maxim Integrated, offers an impressive array of features, including an exceptionally low voltage requirement, an excellent trade-off between power loss and performance, high current and power output capabilities, superior temperature immunity, and an available parallel-to-series port.The SI7382DP-T1-GE3 operates similarly to most other MOSFETs, with its primary applications lying in the gate drive and power management sectors. A MOSFET, or Metal-Oxide-Semiconductor Field-Effect Transistor, is essentially an amplified switch. It operates by utilizing an electrical potential as a “gate voltage” applied across the gate terminal and source terminal. By varying this gate voltage, the resistance between the drain and source terminals can be actively controlled. This active control allows for the output of the device to be actively regulated, making the SI7382DP a great choice for power management applications.This device utilizes highly advanced silicon technology for an optimized on-state resistance, which allows it to handle larger input voltages and currents, while still maintaining its efficient power loss characteristics. Additionally, with its high breakdown voltage and on-state conduction rating, this device can support even the most demanding gate drive applications.The SI7382DP-T1-GE3 has a parallel-to-series port which further enhances its gate drive and power management capabilities. This port allows for a single signal to be quickly routed to either a series or parallel configuration, depending on the user\'s specific application needs. Additionally, this device is temperature-immune, ideal for operating in extreme temperatures, with immunity up to 85 degrees Celsius. The SI7382DP-T1-GE3 is perfect for a variety of gate drive and power management applications, offering both low voltage requirements, high current and power output capabilities, and temperature immunity. The device’s unique parallel-to-series port provides an added layer of functionality, allowing users to quickly switch between series and parallel configurations as needed. The trade-off between power loss and performance is indisputably one of the device’s most attractive features, making it a top choice for any power management solution.

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