Allicdata Part #: | SI7322ADN-T1-GE3TR-ND |
Manufacturer Part#: |
SI7322ADN-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 15.1A 1212-8 |
More Detail: | N-Channel 100V 15.1A (Tc) 26W (Tc) Surface Mount P... |
DataSheet: | SI7322ADN-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 26W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | ThunderFET® |
Rds On (Max) @ Id, Vgs: | 57 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15.1A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7322ADN-T1-GE3 is a high voltage MOSFET that is used in a variety of applications. The SI7322ADN-T1-GE3 is a single N-channel MOSFET device with an operating voltage of 200V-250V and a drain current of about 700mA. This MOSFET also has an RDS(ON) on-state resistance of only 6Ω, which makes it ideal for high-current and high-voltage applications.
The SI7322ADN-T1-GE3 is used in various applications, including motor control, power supplies, motor control, and high voltage switching. It is also used in low and medium power applications, such as LED lighting and signal amplification. The MOSFET also offers excellent switching performance and low on-resistance.
The operating principle of the MOSFET is based on the MOSFET’s ability to control current flow through the channel. It works by controlling the voltage applied to the drain-source terminal. When no voltage is applied to the drain-source terminal, the channel is pinched off and no current flows. On the other hand, when a voltage is applied to the drain-source terminal, the channel opens up and current flows through it.
The MOSFET is controlled by the gate terminal. When a positive voltage is applied to the gate terminal, it creates a positive charge on the channel, which attracts electrons from the source terminal and repels electrons from the drain terminal. This results in a depletion region formed between the source and drain terminals, which blocks current flow and results in the MOSFET being in the “off” state.
On the other hand, when a negative voltage is applied to the gate terminal, it creates a negative charge on the channel and this attracts electrons from the drain terminal and repels electrons from the source terminal. This results in a depletion region being formed between the drain and source terminals, which allows current to flow and the MOSFET is in the “on” state.
The SI7322ADN-T1-GE3 MOSFET is therefore ideal for applications requiring high voltage switching, such as LED lighting, motor control, power supplies, and signal amplification. It offers excellent switching performance and low on-resistance, which makes it suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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