SI7308DN-T1-E3 Discrete Semiconductor Products

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The SI7308DN-T1-E3 (hereinafter referred to as "the device" ) is a low voltage, normally-off, silicon-gate field effect transistor designed for use in high-side and high-current switching applications. It is used in a wide range of applications, such as in automotive powertrain and body control systems, industrial motor drives, HVAC systems, power supplies, UPS systems and lighting control systems. The device is also used in communications and other low-voltage applications, such as computer motherboards, mobile phones, flat panel displays and medical instruments.

The device is based on on-resistance technology which gives it a low on-state resistance and low capacitive turn-on that makes it highly efficient. It can be used to controll a wide range of voltages and currents up to a maximum of 60A and 55V.

The device is built on a silicon dioxide gate insulation layer to provide high thermal conductivity and good electrical isolation. This helps to reduce switching losses while increasing the power density of the device.

The device is constructed using a thin film polysilicon gate which is insulated from the silicon substrate underneath. It is then encapsulated in a lead-free molded case to form a compact, reliable and low-cost device.

The device works on a simple principle that is similar to the MOSFET (metal oxide semiconductor field effect transistor). The gate voltage determines the conductivity of the channel between the source and the drain. When the gate voltage is below the established threshold, there is no current flow through the channel and the device is in an OFF state. When the gate voltage is increased above the threshold, the device is switched ON and the current flow is enabled. This can be used to switch various loads as well as to provide variable control over the load by regulating the voltage on the gate.

The SI7308DN-T1-E3 is designed to offer outstanding performance and reliability even in harsh environments. It is rated for pulse current ratings and the design of the device is optimized for minimum switching losses. The device also offers a wide temperature range of -40°C to +105°C, allowing it to be used in extended temperature ranges without the need for additional cooling measures.

The SI7308DN-T1-E3 device is a high performance, low cost, low voltage, and normally-off FET which makes it an attractive choice for a wide range of applications. It is an ideal choice for applications that require high-side and high-current switching, in automotive, industrial, communication, and low-voltage applications such as computers, mobile phones, and medical instruments.

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