SI7326DN-T1-E3 Allicdata Electronics

SI7326DN-T1-E3 Discrete Semiconductor Products

Allicdata Part #:

SI7326DN-T1-E3TR-ND

Manufacturer Part#:

SI7326DN-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 6.5A PPAK 1212-8
More Detail: N-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount Po...
DataSheet: SI7326DN-T1-E3 datasheetSI7326DN-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7326DN-T1-E3 is a N-Channel Logic Level MOSFET. This type of transistor is categorized into a larger class called field-effect transistors (FETs). Specifically, the SI7326DN-T1-E3 is a single type of FET. These transistors rely on an electric field to control their conductive properties and are very well suited for use in switching and amplifying electronic signals.

The SI7326DN-T1-E3 is a very versatile transistor. It offers a wide range of operating voltages and can be used in a variety of applications. For example, it can be used as a switch in a circuit and can also be used to amplify signals. It is most commonly used in applications that require high current and low power. Some of the most common applications include automotive, audio, mobile, and industrial systems.

The SI7326DN-T1-E3 operates on the principle of the field effect transistor. In this type of device, an electric field is applied across a thin semiconductor material between two metal contacts. When the electric field is applied, its area of influence, or “gate”, forms an insulated layer of electrons on the surface of the semiconductor material. This layer of electrons acts as a barrier, controlling current flow to and from the source and drain terminals. This allows the transistor to act as either an amplifier or a switch, depending on how it is wired.

The SI7326DN-T1-E3 has a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of 78A. It has an RDS(on) of 0.0147 Ohms, total gate charge (QG) of 4.9nC, and a maximum power dissipation of 64W. It has a maximum drain-source on-state resistance of 0.12 Ohms at 10V and can handle a maximum junction temperature of 175°C.

The SI7326DN-T1-E3 is an excellent choice for applications that require high current handling and low power consumption. It is extremely versatile and can be used in a wide variety of applications. From automotive systems to mobile and industrial systems, this transistor can help designers create a reliable, efficient, and cost-effective solution to their needs.

The specific data is subject to PDF, and the above content is for reference

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