Allicdata Part #: | SI7322DN-T1-GE3TR-ND |
Manufacturer Part#: |
SI7322DN-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 18A 1212-8 |
More Detail: | N-Channel 100V 18A (Tc) 3.8W (Ta), 52W (Tc) Surfac... |
DataSheet: | SI7322DN-T1-GE3 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 4.4V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 52W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 58 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7322DN-T1-GE3 is a single N-channel enhancement mode Field Effect Transistor (FET) designed for low voltage (<20V) applications. It is a perfect solution for an instant switch on and off and has some of the most power efficient features.The SI7322DN-T1-GE3 has low on-resistance and maintains low gate charge which significantly reduces the overall power consumption of the device. Moreover, it is specially designed with a very low gate-source threshold voltage of just -2V. This ensures that the device can be powered by low voltage battery systems.It is suitable for various low-voltage applications such as automotive, personal computer, consumer, power management, and industrial systems. It can also be used in high frequency switching and high current systems.Working Principle:The SI7322DN-T1-GE3 is manufactured using an advanced CMOS process, making it much smaller than traditional transistors. It functions as an electronic switch and its operation is based upon the principle of a depletion mode MOSFET.When the gate voltage is HIGH (GT), the transistor is “ON,” meaning that current can pass from the drain to the source. When the gate voltage is LOW (GL), the transistor is “OFF” meaning that no current can pass from the drain to the source.The drain-gate voltage must be greater than the threshold voltage (Vth) for the transistor to be in the ON state; otherwise, it remains in the OFF state. In addition, the drain-source voltage (Vds) must also remain below its maximum given in the datasheet.Applications:The SI7322DN-T1-GE3 can be used in a variety of applications due to its low voltage and low power requirements. It can be used as a switch in different applications such as automotive, industrial, consumer, power management and personal computer systems. It is ideal for powering and switching off systems, particularly those powered by battery systems. Furthermore, its low gate-source threshold voltage of -2V and low on-resistance allows for high frequency operation and high current systems.It is also suitable for applications that require switch-mode power supplies and DC/DC converters such as laptop chargers and LED lighting.Conclusion:The SI7322DN-T1-GE3 is an ideal device for low voltage applications such as automotive, consumer, industrial and power management systems. It can provide an instant switch on and off and is suitable for applications requiring high current operation and high frequency operation.The device is ideal for powering and switching off systems and is perfect for applications that require DC/DC converters, switch-mode power supplies, laptop chargers and LED lighting.Overall, the SI7322DN-T1-GE3 is an ideal device for low voltage applications with low power requirements as it offers low gate charge and low on-resistance which significantly reduces the power consumption of the device.
The specific data is subject to PDF, and the above content is for reference
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