SI7315DN-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7315DN-T1-GE3TR-ND

Manufacturer Part#:

SI7315DN-T1-GE3

Price: $ 0.46
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 150V 8.9A 1212-8
More Detail: P-Channel 150V 8.9A (Tc) 3.8W (Ta), 52W (Tc) Surfa...
DataSheet: SI7315DN-T1-GE3 datasheetSI7315DN-T1-GE3 Datasheet/PDF
Quantity: 9000
1 +: $ 0.46400
10 +: $ 0.45008
100 +: $ 0.44080
1000 +: $ 0.43152
10000 +: $ 0.41760
Stock 9000Can Ship Immediately
$ 0.46
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 75V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 315 mOhm @ 2.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7315DN-T1-GE3 is an N-Channel structured Field Effect Transistor (FET). It is made out of a single Si transistor that functions as both a driver and a transistor in order to provide efficient electrical power transmission.

The FET is one of the most commonly used active elements in the world of electronics due to its various features that make it suitable for most applications. These features include, but are not limited to, low power consumption, high speed conductivity, low noise, and low on-resistance.

The SI7315DN-T1-GE3 is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor). MOSFETs are slightly different from traditional FETs in that they are insulated by an oxide gate over the channel. This insulator allows the FET to only be activated when the voltage in the control electrode is high, making the device able to switch rapidly and with low power consumption.

The application field of this FET lies in the field of telecommunications, where high-speed data transfer and low noise is essential. It is also often used in the networked audio, video and data-processing applications due to its low power consumption and stability.

The SI7315DN-T1-GE3 works by utilizing the flow of electric current through a semiconductor channel. When the voltage on the gate electrode is increased, the electric current through the channel increases too, thus allowing the transistor to be switched on or off. The thickness of the oxide layer acts as the gate voltage, and affects the amount of current that can flow through the channel. Therefore, the oxide layer must be designed such that it allows the desired current to flow through, while also providing insulation to prevent the gate voltage from being affected by external factors.

The SI7315DN-T1-GE3 is a versatile FET and is an ideal choice for a wide range of applications. It is ideal for applications which require low power consumption, high speed conductivity, low noise, and low on-resistance. Additionally, this FET is easy to use and is available in a variety of packages and sizes, making it suitable for any space or budget.

The specific data is subject to PDF, and the above content is for reference

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