Allicdata Part #: | SI7317DN-T1-GE3TR-ND |
Manufacturer Part#: |
SI7317DN-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 150V 2.8A 1212-8 |
More Detail: | P-Channel 150V 2.8A (Tc) 3.2W (Ta), 19.8W (Tc) Sur... |
DataSheet: | SI7317DN-T1-GE3 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.2W (Ta), 19.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 365pF @ 75V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 9.8nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7317DN-T1-GE3 is a high-frequency, N-channel MOSFET. It is well-suited for use in mobile devices, electronics, and other power electronics applications. The device is available in a miniature 16-pin TSSOP package. The SI7317DN-T1-GE3 has very low gate charge and is capable of switching up to 4MHz in applications requiring fast current switching.
Applications
The SI7317DN-T1-GE3 is a versatile, cost-effective and reliable device suitable for a wide range of applications. It is most commonly used in imaging equipment, telecommunication systems, computer peripherals, consumer electronics, and automotive electronics. It can also be used in waveform converters, high frequency switching circuits, and load switching.
Working Principle
The SI7317DN-T1-GE3 is a high-frequency, N-channel MOSFET. It works by allowing a small current to flow when a larger current is applied to the gate. This phenomenon is called field-effect transistor action, or FET. The open circuit voltage (Vgs) is applied to the gate terminal, which acts as an electrostatic shield between the source and drain. This in turn creates a channel between the source and drain, which is called an inversion layer. This inversion layer of electrons serves as a conductor between the source and the drain and can be restricted or opened by the Vgs. When enough Vgs is applied, the current is allowed to flow, causing the MOSFET to switch on.
An advantage of the SI7317DN-T1-GE3 is its low gate charge. This means that the device can switch very rapidly with minimal lag. The device also has a high frequency operation up to 4MHz, making it ideal for high speed applications.
Conclusion
The SI7317DN-T1-GE3 is a high performance, N-channel MOSFET with a low gate charge and high-frequency operation up to 4MHz. It is suitable for a wide range of applications including imaging equipment, telecommunication systems, computer peripherals, consumer electronics, and automotive electronics. The device is available in a miniature 16-pin TSSOP package, making it ideal for space-constrained applications.
The specific data is subject to PDF, and the above content is for reference
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