
Allicdata Part #: | SI7415DN-T1-E3TR-ND |
Manufacturer Part#: |
SI7415DN-T1-E3 |
Price: | $ 0.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 3.6A 1212-8 |
More Detail: | P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount Po... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.58000 |
10 +: | $ 0.56260 |
100 +: | $ 0.55100 |
1000 +: | $ 0.53940 |
10000 +: | $ 0.52200 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 5.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7415DN-T1-E3 is a single N-channel depletion MOSFET with a very low on resistance. This type of transistor is used to provide power switching and level shifting applications in a variety of electronic devices. In this article, we will discuss the application field and working principle of the SI7415DN-T1-E3, as well as its features and benefits.
Application Field
The SI7415DN-T1-E3 is an ideal transistor for use in applications that require very low on-resistance. It is suitable for power supplies, phase control, and load switch circuits, as well as in DC-DC converters and general purpose switching. It can also be used for applications such as motor control and servo drive control. The SI7415DN-T1-E3 offers a low on-resistance, high throughput current, and low input capacitance, making it ideal for a variety of high power applications.
Working Principle
The SI7415DN-T1-E3 is a N-channel depletion MOSFET. It works by forming a conductive channel between the drain and the source when a small voltage is applied to the gate. As the gate is positively or negatively charged, the threshold voltage allows or blocks the current flow. When the drain and source are connected, a stable current path is created between them, providing a low-resistance path for current to pass through.
The depletion MOSFET has a VCE (drain-to-source voltage) rating of 20V and a maximum drain current of 15A. It has a very low on resistance of 0.015 ohm and a high breakdown voltage of 80V. This helps provide a high efficiency, low power dissipation and low EMI (electromagnetic interference).
Features and Benefits
The SI7415DN-T1-E3 has a number of features and benefits that make it a great choice for a variety of applications. Its low on-resistance allows it to provide high efficiency, while its high throughput current helps reduce power dissipation and increase performance. In addition, its low input capacitance helps reduce EMI and enhance noise immunity. The transistor is also RoHS compliant and has a wide operating temperature range of -40°C to +85°C.
The SI7415DN-T1-E3 is also a great choice for its small package size. The transistor is packaged in a 4-pin D-Pak package, which is among the smallest available for this type of transistor. This makes the SI7415DN-T1-E3 more suitable for applications with limited space, such as server motherboards, routers, and electronic handheld devices.
Overall, the SI7415DN-T1-E3 is a great choice for power switching, level shifting, and other applications that require very low on-resistance. With its wide operating range and low power dissipation, it is sure to provide reliable performance in any application.
The specific data is subject to PDF, and the above content is for reference
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