SI7489DP-T1-E3

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The SI7489DP-T1-E3 is a N-Channel enhancement mode Field Effect Transistor (FET). It is designed for low voltage, high speed power switching applications. This device utilizes a high-cell density cell array combined with advanced circuit design to provide fast switching and low RDS(on). The operating voltage range is from 2V to 8V and the ON-resistance is as low as 20mΩ. It has a breakdown voltage of 30V and a total gate charge of 300nC. This FET has the capability of driving high side, low side, and both sides gate sources with fast switching characteristics.

The working principle of the SI7489DP-T1-E3 is based on the effectiveness of electric fields on the flow of current. FETs consist of an insulated gate, two terminals (drain and source), and a channel filled with semiconductor material. This device is an enhancement mode FET, meaning the gate voltage is initially left floating (uncharged). When a positive voltage of sufficient value is applied to the gate electrode, it modifies the conductivity of the channel. This action creates an inversion layer (depletion region) between the drain and the source, resulting in the current flow between them. This principle, known as the “MOSFET Effect” forms the foundation of the FET’s amplification and switching capabilities.

The SI7489DP-T1-E3 is suitable for use in a multitude of low voltage, high speed applications. For example, it can be used in switch mode power supplies, LED display drivers, PWM motor controllers and automotive electronics such as lighting controls and powertrain systems. It is also popular in high current circuits as it can handle up to 8A with a minimum “on” resistance of only 20mΩ. This FET also has the added advantage of being able to handle high frequency switching with minimal power loss.

In conclusion, the SI7489DP-T1-E3 is an excellent choice for low voltage and high speed applications due to its fast switching characteristics, low on-resistance, and compact size. It is suitable for use in a variety of applications such as switch mode power supplies, LED drivers, motor controllers, and automotive electronics. The device also has excellent high frequency performance and can handle up to 8A with a minimum “on” resistance of only 20mΩ.

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