Allicdata Part #: | SI7495DP-T1-GE3-ND |
Manufacturer Part#: |
SI7495DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 12V 13A PPAK SO-8 |
More Detail: | P-Channel 12V 13A (Ta) 1.8W (Ta) Surface Mount Pow... |
DataSheet: | SI7495DP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 900mV @ 1mA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 21A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Circuit protection and switching applications require robust, reliable and energy-efficient solutions. The SI7495DP-T1-GE3 from Vishay Siliconix is a single N-channel power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that provides excellent features in terms of performance and reliability. This device is available in a single-channel of P-channel packages, and ideally suited for mobile devices as it provides low input capacitance and low power requirements.
SI7495DP-T1-GE3 Application Field
The SI7495DP-T1-GE3 is the perfect solution for many applications such as DC-DC switching, motor control, load switching and power management. This device is perfect for DC-DC converters, charging integrated circuits, and low voltage power management applications. In addition, it can be used in power distribution and other applications that require high power efficiency and high current carrying capacity.
SI7495DP-T1-GE3 Working Principle
The SI7495DP-T1-GE3 is an N-channel MOSFET that utilizes a vertical structure. This allows the device to switch quickly and efficiently, making it suitable for high-performance switching applications. In addition to its vertical structure, the device also has an advanced gate dielectric, which provides enhanced gate charging capabilities. This provides improved switching performance and efficiency.
The SI7495DP-T1-GE3 features a low drain-source on-resistance (RDS) and low input capacitance. This allows the device to operate efficiently and with low power consumption. In addition, it features a low threshold voltage and a high breakdown voltage rating, enabling it to operate in high temperature environments. Furthermore, the device has a wide operating frequency range, allowing it to be used in a variety of applications.
Conclusion
The SI7495DP-T1-GE3 is an ideal single N-channel power MOSFET for various switching and circuit protection applications. It has excellent features such as low input capacitance, low power consumption, and high efficiency. In addition, it is well suited for a variety of applications due to its wide operating frequency and temperature range. By utilizing the device, users can achieve better performance and greater reliability in their applications.
The specific data is subject to PDF, and the above content is for reference
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