SI7463DP-T1-E3 Allicdata Electronics
Allicdata Part #:

SI7463DP-T1-E3TR-ND

Manufacturer Part#:

SI7463DP-T1-E3

Price: $ 0.95
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 40V 11A PPAK SO-8
More Detail: P-Channel 40V 11A (Ta) 1.9W (Ta) Surface Mount Pow...
DataSheet: SI7463DP-T1-E3 datasheetSI7463DP-T1-E3 Datasheet/PDF
Quantity: 800
1 +: $ 0.95000
10 +: $ 0.92150
100 +: $ 0.90250
1000 +: $ 0.88350
10000 +: $ 0.85500
Stock 800Can Ship Immediately
$ 0.95
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.9W (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 9.2 mOhm @ 18.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7463DP-T1-E3 is a N-channel enhancement mode power MOSFET, specifically a Power MOSFET 7X7 Array, that was designed primarily for the power management needs of portable, low-power electronics. As a power MOSFET, it has the ability to operate with a wide range of current levels, from very small amounts to currents of 30A in just a single package. It is an efficient switch and is highly reliable in performance.

The SI7463DP-T1-E3 is an ideal choice for applications that require low on-resistance and high current handling, such as switching power supplies, AC/DC converters, intelligent lighting systems, industrial robots and DC motors, and high-power amplifiers. Since it has a low threshold voltage and a low on-resistance, it is especially useful in applications that require a high degree of control and efficient energy transfer. It can also handle high voltage levels, which makes it suitable for high-power applications.

The working principle of the SI7463DP-T1-E3 is based on the electric field between two N-type and one P-type semiconductor layers, which form a switching area. When a gate voltage is applied, a electric field is generated between the gate and the N-type layer, this electric field is responsible for opening or closing the switch by forming a conductive channel for the current to flow between the gate and the N-type layer. The P-type layer helps to ensure that the current does not escape to other parts of the circuit. As a result, the device can handle higher currents without any problems.

The SI7463DP-T1-E3 also has the ability to operate in a wide range of temperatures, from -65°C to 175°C. This makes it suitable for use in a wide range of applications, from high-temperature automotive and industrial applications, to low-temperature medical and aerospace applications. It also has a low on-resistance, so it can switch at lower voltages with greater efficiency.

In summary, the SI7463DP-T1-E3 is a high-performance N-channel power MOSFET that is well-suited for a variety of low-power electronics applications. It has a wide range of current levels, a low threshold voltage, a low on-resistance, and a wide operating temperature range, making it an excellent choice for power management in portable, low-power electronics. It is also relatively cost-effective and highly reliable.

The specific data is subject to PDF, and the above content is for reference

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