SI7405BDN-T1-GE3 Discrete Semiconductor Products

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The SI7405BDN-T1-GE3 is a N-Channel Enhancement Mode MOSFET produced by Siliconix. It consists of one DMOS logic level database and one N-Channel enhancement mode MOSFET. It is rated at 4.5 Volts maximum gate source voltage and a 3.0 amperes drain current (ID). In addition, the device features an ESD protection level of 8 KV(HBM).

The SI7405BDN-T1-GE3 has a wide range of applications in battery operated equipments, such as portable electronics, LCD displays, and other applications that require very low quiescent current. Its low gate charge, low voltage drop and fast switching characteristics make it ideal for use in low voltage and low power LED drivers, power MOSFETs, and logic level FETs.

The SI7405BDN-T1-GE3 MOSFET has a very simple operating principle. When a voltage (VGS) is applied to the gate of the MOSFET, an electric field is created which causes electrons to accumulate at the gate-oxide interface, inducing a large number of positive charges at the channel-drain junction . This forms an inversion layer between the two junctions which allows current to flow from the source to the drain.

The SI7405BDN-T1-GE3 has an on-resistance (RDS(ON)) that is as low as 8 milliOhms, making it suitable for high current applications. The device also has a low gate threshold voltage (VGS(th)) of 1.8V, which allows it to be driven by higher voltage devices or even voltages higher than its maximum gate source voltage. The device features a maximum drain source voltage (VDS) rating of 20 volts, allowing it to be used in higher power applications.

In order to ensure a high level of protection against ESD, the SI7405BDN-T1-GE3 features an ESD protection level of 8 KV (HBM). Additionally, it has a low gate charge of 21nC, making it suitable for high switching frequency applications. Overall, the SI7405BDN-T1-GE3 is an ideal choice for applications that require low power consumption and high current handling.

In conclusion, the SI7405BDN-T1-GE3 is an N-Channel Enhancement Mode MOSFET. It is suitable for use in portable electronics, LED drivers, FETs, and other low power applications. Its low gate charge and current handling attributes make it ideal for high frequency applications. Additionally, the device features an 8 KV ESD protection level which ensures a good level of protection against ESD.

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