SI7413DN-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SI7413DN-T1-E3

The SI7413DN-T1-E3 is a surface-mounted N-Channel MOSFET. As a member of the MOSFET family of power field-effect transistors, the SI7413DN-T1-E3 is a single device that consists of one amplification transistor, one resistive voltage divider, and two output transistors. This makes it suitable for high-current switching and linear-mode power-supply applications.

The operation and characteristics of the SI7413DN-T1-E3 are based on the MOSFET type of field-effect transistor. This makes it a very reliable device in terms of stability and switching speed. It is also capable of handling high current and power with extremely low power loss. The SI7413DN-T1-E3 is compatible with the majority of N-Channel MOSFETs and can be used in virtually any application where a fast switching, low power-loss device is required.

The SI7413DN-T1-E3 is designed to have a low input voltage (IPD) and is rated to be able to switch up to 4 amps of current. It contains an integrated protection diode, making it compatible with AEC-Q101 (PPAP) and similar vehicle standards. It also has a low input capacitance (Ciss) of 1600pF, making it ideal for analog signal applications where low capacitance is an issue.

The SI7413DN-T1-E3 has a very low on-resistance of 95mΩ, so it is highly suitable for power applications, such as DC-DC converters. It can also be used in vehicle alarms, audio amplifiers and other applications where a low on-resistance, high current switching capability is desired.

The SI7413DN-T1-E3 has a typical VGS (gate-to-source) threshold voltage of -1.6V, making it a good choice for low voltage applications. It also has a low output capacitance (Coss), so it is suitable for applications where speed is important. The device is also capable of withstanding up to 10V maximum VGS reverse bias operations.

In terms of its working principle, the SI7413DN-T1-E3 functions by allowing current to pass through a small channel between its source and drain terminals when a voltage is applied to the gate. This current is then amplified by the MOSFET, which acts as a voltage-controlled resistor. The voltage control is achieved by using the gate-source voltage as a means for modulating the resistance of the channel.

The SI7413DN-T1-E3 can be used in a variety of applications, including switching and linear-mode power supplies, DC-DC converters, embedded systems, automotive applications, audio amplifiers and other situations where a low-power, high-current switching device is required. It is also suitable for applications that require low output capacitance and sound immunity.

The specific data is subject to PDF, and the above content is for reference