SI7414DN-T1-E3

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The SI7414DN-T1-E3 is a p-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) developed to provide an efficient and effective switching solution in a variety of operating conditions. This MOSFET is a type of transistor that has two distinct electrical terminals, the source and the drain. The application field of this device is mainly paved by its impressive combination of electrical characteristics: low on-resistance, low capacitance and drain-source breakdown voltage and relatively low gate charge. In addition, the SI7414DN-T1-E3 can be used in various circuits with different protection features, such as clamping, suppressing transients and providing higher reliability.

The working principle of this MOSFET is similar to that of a regular N-MOSFET with gate, source and drain terminals. This device has an insulated gate which is controlling the current flow, when the applied voltage is low the gate does not conduct, providing no current between source and drain. When the voltage is increased and a certain threshold voltage is reached, carriers in the channel start to conduct, allowing current to flow to the drain terminal. At this point, the device is turned “on” and the current flow is increased until the increased gate voltage is too low or the drain-source voltage is too high. The gate-to-source voltage (VGS) is the “threshold voltage” that is required to turn the device “on”. If the applied voltage is low or slow enough, the drain-source voltage (VDS) exceeds the allowed maximum value and the device “shuts” off.

The SI7414DN-T1-E3 offers the following features: On-resistance of 8 milliohms at VGS =10V and ID = 24 mA, breakdown voltage of 20 Volts at ID = 150µA and D-S capacitance of 8 pF at VGS =10V. This device has an absolute maximum drain-source voltage of 30V, as well as a maximum drain-source on-state resistance of 30 mOhm. These characteristics make this MOSFET an ideal choice for a variety of higher-current applications, such as switching powers supply, DC motors, audio amplifiers and automotive circuits. It also has a high peak current which allows the device to switch at a much faster rate.

The SI7414DN-T1-E3 offers excellent power handling capabilities and can be used in applications with high voltage spikes, such as automotive ignition systems or high current solenoid circuits. This device is also suitable for low-noise applications, such as handset microphone circuits, as it has low gate charge and low output capacitance. In addition, this MOSFET, thanks to its low on-state resistance, has a relatively low power dissipation, which makes it a good fit for high-efficiency designs.

Overall the SI7414DN-T1-E3 is a p-channel MOSFET which offers excellent electrical properties combined with a small size. It is suitable for a variety of applications such as automotive, audio, and switching power supply circuits. Thanks to its low on-state resistance, low capacitance and drain-source breakdown voltage it helps to ensure efficient and effective switching solutions and provides high reliability.

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