SI7411DN-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7411DN-T1-GE3TR-ND

Manufacturer Part#:

SI7411DN-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 7.5A 1212-8
More Detail: P-Channel 20V 7.5A (Ta) 1.5W (Ta) Surface Mount Po...
DataSheet: SI7411DN-T1-GE3 datasheetSI7411DN-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 300µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 19 mOhm @ 11.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI7411DN-T1-GE3 is a type of transistor, which are found in many electronic components. It is classified as a type of FET or Field Effect Transistor, a member of the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) family, and is known as a single-gate semiconductor device.

A FET is an active device, meaning that it requires an input signal in order to control current flow. The SI7411DN-T1-GE3 operates in the same way as other FETs, by controlling the flow of current between two points in an electrical circuit. It uses an electric field to control the resistance of semiconductor material, in this case silicon. This allows the SI7411DN-T1-GE3 to act as either a switch or an amplifier, depending on the application.

The SI7411DN-T1-GE3 is a type of N-Channel MOSFET, which operates using the same principle as an NPN transistor. The N-Channel MOSFET has an advantage over the NPN transistor in that it is able to handle much higher current levels without the need for additional components such as drivers and heat sinks. This makes the SI7411DN-T1-GE3 ideal for high-powered applications.

The SI7411DN-T1-GE3 is a very versatile device and is used in many different types of applications. It can be used in audio amplifiers, data converters, DC motor controllers, power regulators, and high-speed switching applications. It is also used in medical device technology and controlled environment equipment.

As its name implies, the SI7411DN-T1-GE3 is a single-gate MOSFET. This means that it has a single gate electrode, which allows the device to be switched on and off. To do this, a voltage is applied to the gate electrode, which causes an electric field to be created. This electric field varies with the amount of voltage applied, and depending on the type of transistor, it changes the resistance of the channel, thus allowing for current to flow.

The SI7411DN-T1-GE3 is a surface-mount device, meaning that it is designed to be mounted directly onto the surface of a printed circuit board. This reduces the size of the device and allows for better integration into the circuit board. The SI7411DN-T1-GE3 has several features which make it attractive for this type of application. These include its low on-state resistance, fast switching times, and low power consumption.

The SI7411DN-T1-GE3 is an excellent choice for a variety of applications requiring high-current, high-speed switching. It can be used for audio amplifiers, data converters, and high-speed switching applications. Additionally, its low power consumption makes it ideal for battery-powered applications. This makes the SI7411DN-T1-GE3 a versatile and powerful tool that is sure to serve its user well in a range of applications.

The specific data is subject to PDF, and the above content is for reference

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