SI7469DP-T1-GE3

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The SI7469DP-T1-GE3 is a N-Channel MOSFET developed by Vishay Semiconductors that is used for high-pressure switching applications. It utilizes advanced cell technology and is designed for low gate charge and low on-resistance. The device offers superior performance for fast switching and is suitable for use in digital circuits, audio circuits, and power management applications.

The device utilizes N-channel MOSFET technology, which allows it to switch quickly and reliably. A MOSFET is a transistor with two terminals, the source and the drain. A voltage applied to the gate forms an electric field between the source and the drain, and this in turn controls the current through the MOSFET. MOSFETs are robust and reliable, and are a favorite choice for switching applications.

The SI7469DP-T1-GE3 is a single N-Channel MOSFET with a drain-source voltage of 30V, drain-source on resistance of 0.8 ohm, and a maximum current of 15.6A. The device offers low gate charge, low on-resistance, and fast switching performance. It is suitable for use in high-power switching, audio amplifier circuits, and power management applications. It is a great choice for digital circuit application requiring superior switching performance. The device has low power dissipation and is able to work with low gate levels, making it ideal for digital circuits.

The device is designed for surface mount applications and can be easily soldered to the device substrate. The device has an exposed thermal pad for better heat dissipation and it also has a larger die size for added thermal performance. The device is also RoHS Compliant, making it suitable for use in a wide range of applications.

In summary, the SI7469DP-T1-GE3 is a N-Channel MOSFET developed by Vishay Semiconductors that is used for high-power switching applications. The device offers superior performance for fast switching, low gate charge, low on-resistance, and a maximum current of 15.6A. It is suitable for a wide range of applications, including digital circuits, audio circuits, and power management applications. The device has an exposed thermal pad for greater heat dissipation, a larger die size for added thermal performance, and is RoHS Compliant.

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