SI7842DP-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7842DP-T1-E3 is a transistor array that belongs to the class of FETs and MOSFETs. This device is a widely versatile intented quad N-channel power MOSFET that has been designed for smart and high density circuits. It minimizes conduction losses and is compatible with most output current requirements. Characteristics such as low on-resistance, high efficiency, and superior heat dissipation make this device very convenient for applications in many fields.

The device comprises of four independently controlled power MOSFETs that are optimally designed using advanced BiCMOS process technology. It offers a very low on-resistance combined with a low input capacitance. The device also provides a very low switching loss, which makes it suitable for high frequency operation. In addition, it also offers superior heat dissipation and maximum power dissipation in most applications.

The SI7842DP-T1-E3 has a wide range of applications in different fields, including power factor correction designs, switching power supplies, motor controls, as well as Smart Switch systems. This device is also integrated with features such as a high drive voltage, fast switching time, and low RDS(ON) for superior performance in all applications. With its low gate threshold voltage, high output current, and low input capacitance, the SI7842DP-T1-E3 is ideal for switching power supplies and motor controls. Additionally, its low input capacitance, low gate threshold voltage, and high drive voltage make it suitable for smart switch systems as well.

The SI7842DP-T1-E3 also offers superior heat dissipation and maximum power dissipation in most applications. Its fast on-time and fast off-time characteristics make it ideal for high frequency operation. The device also offers a low leakage current, making it suitable for use in low input power systems. In addition, its low input voltage helps in the efficient operation of the device.

The working principle of the SI7842DP-T1-E3 is very efficient. The device contains four independent power MOSFETs that are controlled by the application of an input signal current. This current is compared with the threshold voltage and if it is greater than the threshold voltage, the switch is turned on. If the input signal current is less than the threshold voltage, the switch is turned off. The maximum power dissipation of the device depends on the amount of current applied and the temperature of the junction.

The SI7842DP-T1-E3 is an ideal device for a wide range of applications in different fields. It offers excellent performance in a variety of applications, thanks to its low input capacitance, low gate threshold voltage, high drive voltage, and low RDS(ON). Additionally, its excellent heat dissipation and low leakage current make it suitable for low input power systems.

The specific data is subject to PDF, and the above content is for reference