SI7806ADN-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7806ADN-T1-GE3 is a logic level N-channel enhancement-mode Field-effect Transistor (FET) with a low gate-to-source voltage, VGS, which is beneficial for battery-powered applications. It is suitable for low current applications that require high-speed operation and high and low side switching.

A FET is an electronic device that controls current flow through a semiconductor channel. It works on the principle of modulating an electrical charge by using a polarizable dielectric or an electric field. The main difference between a FET and a conventional transistor is that FETs have no charge carriers in the base. Instead, the charges are in the semiconductor channel which connects the gate and the source. When a voltage is applied to the gate, the charge carriers in the channel are attracted and flow from the source to the drain. The voltage applied to the gate controls the current flow in the channel and thus regulates the current that flows from source to drain.

The SI7806ADN-T1-GE3 is a single FET that operates in a very low voltage range from 0.5V to 5.5V. In addition, the current gain is superior compared to other FETs in the same low-voltage range. The low gate-to-source voltage assists in achieving reduced power consumption and higher efficiency. Additionally, with a low threshold voltage it is suitable for low current applications, helping to extend battery life and reduce design costs. Its low on-state resistance (RDS(on)) further enhances its performance by reducing losses in the circuit and thus improving the overall efficiency of the system.

The SI7806ADN-T1-GE3 can be used in a wide range of applications, from low-power electronics to high-speed switching applications, such as LED lighting and automotive applications. Its superior RDS(on) also makes it suitable for motor control applications, as it reduces power losses and impedance for a stable operation.

In conclusion, the SI7806ADN-T1-GE3 is a versatile single N-channel FET with a low gate-to-source voltage, which is ideal for low-voltage battery-powered systems. Its low-voltage operation and superior RDS(on) make it suitable for a variety of applications, from LED lighting to motor control.

The specific data is subject to PDF, and the above content is for reference