SI7858ADP-T1-E3

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SI7858ADP-T1-E3 is a semiconductor device belonging to the family of Field Effect Transistors (FETs) and is designed to regulate current flow in an electrical circuit. It is specially designed as a Single Enhancement Mode Power MOSFET, hence its other name "eMOSFET". This device is ideal for applications in high voltage, low on-resistance and low drive current applications, such as automotive power supplies, lanterns, converters, UPSs and servers.

The SI7858ADP-T1-E3 is a P-channel enhancement mode MOSFET with a maximum drain current of 3A and a maximum drain voltage of 20V. It is also capable of having high speed switching characteristics. It can handle a wide range of signal levels and power levels, making it ideal for use in low-power and high frequency applications. Its minimum on-resistance is 3.9 Ohms, meaning it is capable of dissipating effective power and preventing device overloading. It is also designed to operate at a high efficiency rate and can operate over a temperature range of -55 to 125 degrees Celsius.

The construction of the device is quite simple. The Drain and Source represent the positive and negative terminals of the MOSFET. The Gate represents the control current. When there is no current flowing through the Gate terminal, the Si7858ADP-T1-E3 is in its non-conductive state, meaning there is no current flowing between the Drain and Source. The Gate terminal must be charged with a voltage that is higher than the threshold voltage of the MOSFET in order to turn it on. When this occurs, the MOSFET will allow current to flow between the Drain and Source in a controlled manner.

The SI7858ADP-T1-E3 is an excellent choice for applications where high speed switching and efficiency are important. It can be used in a variety of systems, from low-power electronic devices such as cell phones, to high-end server systems. In addition, the device offers a wide range of features, including low on-resistance, high voltage tolerant gates, and a temperature resistant package that can operate over a wide temperature range.

The SI7858ADP-T1-E3 offers a variety of options for applications, depending on the requirements of the user. Its wide frequency range, low on-resistance, and high voltage tolerant gates enable it to be used in a variety of different applications, while its wide temperature range makes it suitable for use in extreme environments. In addition, its high efficiency and low drive current capacity make it ideal for use in low power, high frequency applications.

The SI7858ADP-T1-E3 is a great choice for applications requiring fast switching, high voltage tolerance, and efficient operation. Its wide temperature range, low on-resistance, and high voltage tolerant gates make it suitable for a wide range of applications, while its low drive current capacity and high efficiency make it suitable for low power, high frequency applications. With its wide range of features and capabilities, the SI7858ADP-T1-E3 is an ideal choice for a variety of applications.

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