Allicdata Part #: | SI7872DP-T1-E3TR-ND |
Manufacturer Part#: |
SI7872DP-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 6.4A PPAK SO-8 |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 30V 6.4A 1.... |
DataSheet: | SI7872DP-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | SI7872 |
Supplier Device Package: | PowerPAK® SO-8 Dual |
Package / Case: | PowerPAK® SO-8 Dual |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.4W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Series: | LITTLE FOOT® |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 7.5A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.4A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Half Bridge) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI7872DP-T1-E3 is a highly efficient and reliable power FET (Field Effect Transistors) array. It is composed of two independent silicon-gate power FETs capable of providing current and voltage up to 45A. Each FET also has a thermal shutdown with reset capability. This makes the SI7872DP-T1-E3 a great choice for powering a variety of loads. In this article, the application field and working principle of the SI7872DP-T1-E3 will be discussed.
Application Field
The SI7872DP-T1-E3 is suitable for many applications. It is particularly well-suited for power supplies, motor drives and various high power, high voltage applications. It is difficult to provide a list of all the applications this FET array can be used for, but some of the more common ones are listed below:
- Power supplies
- DC-DC converters
- Motor control circuits
- Uninterruptible power supplies (UPSs)
- High power, high voltage switching devices
The SI7872DP-T1-E3 is also well-suited for automotive applications due to its wide operating temperature range and ability to operate in harsh environments. It is capable of supplying high power in cold and hot temperatures and can handle temperatures up to 150°C with excellent reliability.
Working Principle
The SI7872DP-T1-E3 is an N-channel enhancement-mode power FET with two independent FETs. It operates when a voltage is applied to the gate that is greater than the source voltage. The sourcevoltage is often referred to as the FET threshold voltage. When this threshold voltage is reached, a channel is created within the FET and current is allowed to flow from source to drain. This is often referred to as “turning on” the FET and allowing the current to flow.
The SI7872DP-T1-E3 has excellent thermal characteristics and is able to provide peak currents up to 45A. This FET array also has a thermal shutdown with reset capability that prevents overheating and consequent damage. The thermal shutdown also helps to provide a margin of safety by protecting the device from excessive temperatures that it could otherwise not handle on its own. This makes it a great choice for applications requiring high currents.
Conclusion
The SI7872DP-T1-E3 is a highly efficient and reliable array of power FETs. It is suitable for many applications, such as power supplies, DC-DC converters, motor control circuits and uninterruptible power supplies. This FET array has excellent thermal characteristics and is capable of providing peak currents up to 45A. It also features a thermal shutdown with reset capability to prevent overheating and consequent damage. Overall, the SI7872DP-T1-E3 is a great choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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