SI7850ADP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7850ADP-T1-GE3TR-ND

Manufacturer Part#:

SI7850ADP-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V POWERPAK SO-8
More Detail: N-Channel 60V 10.3A (Ta), 12A (Tc) 3.6W (Ta), 35.7...
DataSheet: SI7850ADP-T1-GE3 datasheetSI7850ADP-T1-GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.6W (Ta), 35.7W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Series: TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7850ADP-T1-GE3 is a high-performance depletion-mode field-effect transistor (FET) from Vishay Semiconductor. It is a single-load N-channel enhancement-mode device with an ultra-low threshold, allowing it to be used in applications where other FETs have difficulty operating. Notable applications include integrated power supplies and low-power circuits.

A field-effect transistor (FET) is a type of transistor, similar to a bipolar junction transistor (BJT). FETs differ in that they employ electric field and surface-conduction to regulate the movement of electrons, rather than a bipolar junction. FETs are used in electronic devices such as integrated circuits, amplifier circuits and voltage-controlled oscillators (VCOs).

The SI7850ADP-T1-GE3 is a depletion mode FET. This type of Fet uses an electric field to reduce the conductivity of the channel, vice the enhancement-mode FET which increases the conductivity. Therefore, a stronger electric field is needed to control the current in a depletion-mode FET in order to cease channel conduction.

The SI7850ADP-T1-GE3 is unique in that it has a very low threshold voltage, meaning that it can be used in applications that other FETs would struggle with. This makes the FET suitable for integrated power supplies, and low-power circuits. This makes it well-suited for applications where precision, low-voltage operation is needed, such as in low-power CMOS logic and memory circuits.

The SI7850ADP-T1-GE3 is also suitable for use in a variety of audio circuitry applications, including headphone amplifiers, line-level pre-amplifiers, and general-purpose audio amplifiers. This is due to its ultra-low threshold, which allows it to accurately reproduce a wide range of audio frequencies. Additionally, its low off-state leakage current ensures low levels of distortion, even at higher gains.

The SI7850ADP-T1-GE3 is also suitable for automotive applications. Its low on-state resistance, coupled with its low gate threshold makes it an ideal choice for low-side switching devices, particularly in applications such as DC motors, ABS systems and drive-by-wire systems.

In conclusion, the SI7850ADP-T1-GE3 is a high-performance depletion-mode field-effect transistor. It is suitable for a range of applications, including integrated power supplies, automotive electronics, and audio circuitry. Its low on-state resistance, coupled with its ultra-low threshold voltage make it an ideal choice for precise, low-voltage operation.

The specific data is subject to PDF, and the above content is for reference

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