Allicdata Part #: | SI7850ADP-T1-GE3TR-ND |
Manufacturer Part#: |
SI7850ADP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V POWERPAK SO-8 |
More Detail: | N-Channel 60V 10.3A (Ta), 12A (Tc) 3.6W (Ta), 35.7... |
DataSheet: | SI7850ADP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 35.7W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 790pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs: | 19.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.3A (Ta), 12A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7850ADP-T1-GE3 is a high-performance depletion-mode field-effect transistor (FET) from Vishay Semiconductor. It is a single-load N-channel enhancement-mode device with an ultra-low threshold, allowing it to be used in applications where other FETs have difficulty operating. Notable applications include integrated power supplies and low-power circuits.
A field-effect transistor (FET) is a type of transistor, similar to a bipolar junction transistor (BJT). FETs differ in that they employ electric field and surface-conduction to regulate the movement of electrons, rather than a bipolar junction. FETs are used in electronic devices such as integrated circuits, amplifier circuits and voltage-controlled oscillators (VCOs).
The SI7850ADP-T1-GE3 is a depletion mode FET. This type of Fet uses an electric field to reduce the conductivity of the channel, vice the enhancement-mode FET which increases the conductivity. Therefore, a stronger electric field is needed to control the current in a depletion-mode FET in order to cease channel conduction.
The SI7850ADP-T1-GE3 is unique in that it has a very low threshold voltage, meaning that it can be used in applications that other FETs would struggle with. This makes the FET suitable for integrated power supplies, and low-power circuits. This makes it well-suited for applications where precision, low-voltage operation is needed, such as in low-power CMOS logic and memory circuits.
The SI7850ADP-T1-GE3 is also suitable for use in a variety of audio circuitry applications, including headphone amplifiers, line-level pre-amplifiers, and general-purpose audio amplifiers. This is due to its ultra-low threshold, which allows it to accurately reproduce a wide range of audio frequencies. Additionally, its low off-state leakage current ensures low levels of distortion, even at higher gains.
The SI7850ADP-T1-GE3 is also suitable for automotive applications. Its low on-state resistance, coupled with its low gate threshold makes it an ideal choice for low-side switching devices, particularly in applications such as DC motors, ABS systems and drive-by-wire systems.
In conclusion, the SI7850ADP-T1-GE3 is a high-performance depletion-mode field-effect transistor. It is suitable for a range of applications, including integrated power supplies, automotive electronics, and audio circuitry. Its low on-state resistance, coupled with its ultra-low threshold voltage make it an ideal choice for precise, low-voltage operation.
The specific data is subject to PDF, and the above content is for reference
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