SI7884BDP-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI7884BDP-T1-E3 is a single Mosfet (Metal Oxide Semiconductor Field Effect Transistor) which belongs to the family of JFETs (Junction Field Effect Transistors). It is a 3-pin device with a wide operating temperature range and its features make it well-suited to a variety of applications.

The SI7884BDP-T1-E3 is an enhancement-mode Mosfet with a tolerance of 1.2 V VGS (Gate-to-Source Voltage). It has a high drain current of 2.6 A and a low on-resistance of 4.3 Ω, making it ideal for applications such as: switching voltage regulaters, motor control, and load switching in automotive systems. The SI7884BDP-T1-E3 also offers good ESD (Electrostatic Discharge) protection with a minimum 8 kV contact ESD rating.

The SI7884BDP-T1-E3 works on the principle of an enhancement-mode MOSFET, in which the gate input voltage controls the current flowing from the source to the drain. When the gate voltage is maintained between 0V and VGS, the current through the device is zero, since the channel remains non-conductive. When the gate voltage is increased to more than VGS, the channel becomes conductive and allows current to flow through the device. This voltage control is what makes the MOSFET ideal for applications like switching and logic level control.

In conclusion, the SI7884BDP-T1-E3 is an excellent choice for applications that require high current switching, voltage regulation, and load switching. Its low on-resistance, wide temperature range, and ESD protection make it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference