| Allicdata Part #: | SI7810DN-T1-E3TR-ND |
| Manufacturer Part#: |
SI7810DN-T1-E3 |
| Price: | $ 0.41 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 100V 3.4A 1212-8 |
| More Detail: | N-Channel 100V 3.4A (Ta) 1.5W (Ta) Surface Mount P... |
| DataSheet: |  SI7810DN-T1-E3 Datasheet/PDF |
| Quantity: | 27000 |
| 1 +: | $ 0.41000 |
| 10 +: | $ 0.39770 |
| 100 +: | $ 0.38950 |
| 1000 +: | $ 0.38130 |
| 10000 +: | $ 0.36900 |
Specifications
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | PowerPAK® 1212-8 |
| Supplier Device Package: | PowerPAK® 1212-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.5W (Ta) |
| FET Feature: | -- |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 62 mOhm @ 5.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 3.4A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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SI7810DN-T1-E3 is a single N-channel enhancement mode Field Effect Transistor (FET). This component is part of a widespread family of FETs used in a range of electronic applications including audio amplifiers, logic circuits, voltage level shifting, and radio frequency (RF) applications.
Introduction
Field Effect Transistors (FETs) are three-terminal devices used for a variety of purposes in an electrical circuit. FETs have the ability to be controlled with a Shmicke-Mensky Equivalent Circuit (SMEC) mode shunt, making them a great choice for circuits that need to be controlled electronically, such as logic circuits, voltage level shifting, and RF applications. The SI7810DN-T1-E3 is an N-channel enhancement mode FET, meaning it is turned on when a voltage is applied to the gate terminal.
Field Effect Transistors (FETs) are three-terminal devices used for a variety of purposes in an electrical circuit. FETs have the ability to be controlled with a Shmicke-Mensky Equivalent Circuit (SMEC) mode shunt, making them a great choice for circuits that need to be controlled electronically, such as logic circuits, voltage level shifting, and RF applications. The SI7810DN-T1-E3 is an N-channel enhancement mode FET, meaning it is turned on when a voltage is applied to the gate terminal.
Application Field
The SI7810DN-T1-E3 is suitable for a range of applications including audio amplifiers, logic circuits, voltage level shifting, and radio frequency (RF) applications due to its FET characteristics. In audio amplifiers, the SI7810DN-T1-E3 is able to provide high output impedance and ideal frequency response. In logic circuits, it can be used to switch inputs, as it has low input impedance and low power consumption. In RF applications, the SI7810DN-T1-E3 has excellent gain linearity and suitable gain at high frequencies makes it a great choice for any application.
The SI7810DN-T1-E3 is suitable for a range of applications including audio amplifiers, logic circuits, voltage level shifting, and radio frequency (RF) applications due to its FET characteristics. In audio amplifiers, the SI7810DN-T1-E3 is able to provide high output impedance and ideal frequency response. In logic circuits, it can be used to switch inputs, as it has low input impedance and low power consumption. In RF applications, the SI7810DN-T1-E3 has excellent gain linearity and suitable gain at high frequencies makes it a great choice for any application.
Working Principle
The SI7810DN-T1-E3 is an N-channel enhancement mode FET, meaning it has a channel of negatively charged electrons at the source. When a positive voltage is applied to the gate terminal, the channel opens and electrons begin flowing from the source to the drain, creating an electrical current. This process is called enhancement because the voltage applied to the gate terminal enhances the current flow. The amount of current that can flow through the FET is proportional to the voltage applied to the gate terminal, which is why it is used in electron control circuits like logic circuits, voltage level shifting, and RF applications.
The SI7810DN-T1-E3 is an N-channel enhancement mode FET, meaning it has a channel of negatively charged electrons at the source. When a positive voltage is applied to the gate terminal, the channel opens and electrons begin flowing from the source to the drain, creating an electrical current. This process is called enhancement because the voltage applied to the gate terminal enhances the current flow. The amount of current that can flow through the FET is proportional to the voltage applied to the gate terminal, which is why it is used in electron control circuits like logic circuits, voltage level shifting, and RF applications.
Conclusion
The SI7810DN-T1-E3 is a single N-channel enhancement mode FET that is suitable for a range of applications including audio amplifiers, logic circuits, voltage level shifting, and RF applications. It is controlled by an SMEC mode shunt, making it an excellent choice for any application that needs to be controlled electronically. The FET\'s characteristics make it ideal for applications that require high output impedance, low input impedance, and low power consumption. Its excellent gain linearity and suitable gain over a wide frequency range make it a great choice for any application.
The SI7810DN-T1-E3 is a single N-channel enhancement mode FET that is suitable for a range of applications including audio amplifiers, logic circuits, voltage level shifting, and RF applications. It is controlled by an SMEC mode shunt, making it an excellent choice for any application that needs to be controlled electronically. The FET\'s characteristics make it ideal for applications that require high output impedance, low input impedance, and low power consumption. Its excellent gain linearity and suitable gain over a wide frequency range make it a great choice for any application.
The specific data is subject to PDF, and the above content is for reference
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