Allicdata Part #: | SI7842DP-T1-GE3TR-ND |
Manufacturer Part#: |
SI7842DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 6.3A PPAK SO-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 6.3A 1.4W Surf... |
DataSheet: | SI7842DP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | LITTLE FOOT® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6.3A |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1.4W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SO-8 Dual |
Supplier Device Package: | PowerPAK® SO-8 Dual |
Base Part Number: | SI7842 |
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The SI7842DP-T1-GE3 is an array of internally connected field effect transistors (FETs) which are connected in a "common source configuration". This is a type of device which is often used in circuits which control the flow of current or signal amplifiers. The array of FETs is connected internally in a "common source configuration" which results in the device providing better output current performance than a single FET device.
The common source configuration is a type of circuit in which the source terminal of each of the FETs is connected to a common source of voltage or current. The gate terminals then act as individual inputs, allowing each FET to be individually controlled. This type of configuration is often used to increase the output current capability of the device, as each gate can provide current to the common source, which then flows out of the drain.
The SI7842DP-T1-GE3 array has a gate-source voltage rating of 20V and a drain-source voltage rating of 20V. The gate-source voltage rating allows it to be used in circuits which require high voltages and the drain-source voltage rating ensures that the device can handle the large currents that some circuits require. The device also has a very low on resistance of 0.06 ohms. This allows the device to provide a high level of current for its size and is useful for circuits which require high power outputs.
The common source configuration of the SI7842DP-T1-GE3 also allows it to be used as an amplifier. The connection of the FETs in the common source configuration allows the device to provide an amplification of the input signal. This is useful for applications such as audio amplifiers, where an analog signal needs to be amplified for use in other circuits.
The SI7842DP-T1-GE3 device is typically used in circuits which require current or signal amplification, or when a large output current is required. It is commonly used in audio amplifiers, power switch circuits, and other applications which require high current or high voltage levels. The device can also be used as an amplifier due to the common source configuration, allowing the device to amplify a signal before passing it to other circuits. This makes the SI7842DP-T1-GE3 device a versatile and useful component for many applications.
The specific data is subject to PDF, and the above content is for reference
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