SI7852ADP-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI7852ADP-T1-E3TR-ND |
Manufacturer Part#: |
SI7852ADP-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 80V 30A PPAK SO-8 |
More Detail: | N-Channel 80V 30A (Tc) 5W (Ta), 62.5W (Tc) Surface... |
DataSheet: | SI7852ADP-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1825pF @ 40V |
FET Feature: | -- |
Power Dissipation (Max): | 5W (Ta), 62.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SO-8 |
Package / Case: | PowerPAK® SO-8 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 8V, 10V |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
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The SI7852ADP-T1-E3 is a type of low-voltage, low-current stainless steel, high-performance N-Channel enhancement mode MOSFET. The MOSFET stands for Metal Oxide Semiconductor Field-Effect Transistor, which is a type of transistor that uses an electric field to control the shape or conductivity of the flow of electrons. The MOSFET is a key component in components that control the flow of electricity in devices, such as amplifiers, power supplies and motor controllers. The SI7852ADP-T1-E3 is a high-performance N-channel MOSFET, which means it uses an electric field to control the conductivity of the flow of electrons in an N-type channel. This makes it suitable for high-speed switching applications, especially in the electronics industry.
The SI7852ADP-T1-E3 has a wide range of applications thanks to its low-voltage, low-current stainless steel design. It is widely used in power-saving circuits, such as in LED lighting or charging circuits, as well as in switching power supplies, computer peripherals, automotive electronic circuits and industrial automatic control systems. This MOSFET is also widely used in battery-powered applications due to its low operating voltage, low power consumption and high current levels.
The working principle of the SI7852ADP-T1-E3 is based on controlling the conductivity of an N-type channel using an electric field. This is done by applying an external electric field to the gate of the MOSFET, which in turn creates an insulated gate field effect. This creates an inversion layer between the gate and the substrate, which allows electrons to flow freely between the source and drain when a positive voltage is applied to the gate. This makes it suitable for high-speed switching applications, as it can quickly and accurately open and close the flow of electrons. The low voltage and low current design of the SI7852ADP-T1-E3 also makes it suitable for battery-powered applications.
The SI7852ADP-T1-E3 is a highly reliable and powerful MOSFET. The stainless steel body provides great protection from heat, moisture and corrosion, making it suitable for long-term use. Its low voltage and low current design also makes it ideal for use in battery-powered applications. Thanks to its superior switching performance and high current levels, the SI7852ADP-T1-E3 is used in a variety of applications, from LED lighting to power-saving circuits to automotive and industrial electronics.
The specific data is subject to PDF, and the above content is for reference
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