Allicdata Part #: | SI7844DP-T1-E3CT-ND |
Manufacturer Part#: |
SI7844DP-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 6.4A PPAK SO-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 6.4A 1.4W Surf... |
DataSheet: | SI7844DP-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6.4A |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1.4W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SO-8 Dual |
Supplier Device Package: | PowerPAK® SO-8 Dual |
Base Part Number: | SI7844 |
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SI7844DP-T1-E3 FET Array is an advanced 8-channel power switch that has been designed to provide better thermal spreading and allow higher current ratings than discrete FETs. This array is perfect for applications that require high efficiency, low voltage drop and high-performance switching. It is designed to provide low ON-resistance, low ON-state voltage loss and fast turn-off times. The SI7844DP-T1-E3 FET Array is a 100V-capable device with a driver stage that includes two power MOSFETs with low gate charge and low gate-source capacitance.
The SI7844DP-T1-E3 FET Array can be used in a variety of applications such as motor/drive control, lighting control and audio/video equipment. It can also be used in household and industrial applications where a high current rating is required. The device is capable of handling up to 10A continuous current per channel. The low ON-resistance and the ability to withstand high voltage and current allow it to be used in applications where efficiency is critical.
The operation and application of the SI7844DP-T1-E3 FET Array is based on its MOSFET structure. The device is made up of two power MOSFETs connected in parallel and each one features independent gate control and source connections. When not in use, the gate and source terminals are connected to each other and the MOSFET is turned off. When a gate signal is applied, the internal gate resistance of the MOSFET is reduced and the drain current is increased. This results in a low RDS(ON) and high efficiency switching performance.
The SI7844DP-T1-E3 is capable of providing high-frequency switching with low switching losses due to its low gate charge. It also has enhanced thermal performance due to its low RDS(ON) and a wide output voltage range. It is easy to configure for use in applications such as Class-D amplifier, high current motor control and AC/DC converter switches.
The SI7844DP-T1-E3 FET Array is a highly efficient and low voltage drop component with an excellent thermal performance. Its low gate charge and low RDS(ON) make it ideal for high efficiency applications such as motor control, lighting control and audio/video equipment. It is also an excellent choice for high performance switching applications that require a low voltage drop and high-frequency operation.
The specific data is subject to PDF, and the above content is for reference
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