SI7804DN-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7804DN-T1-GE3-ND

Manufacturer Part#:

SI7804DN-T1-GE3

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 6.5A 1212-8
More Detail: N-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount Po...
DataSheet: SI7804DN-T1-GE3 datasheetSI7804DN-T1-GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.36515
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7804DN-T1-GE3 is a single-channel high-side N-channel enhancement-mode transistor designed for power switching applications. It is specifically designed to provide high efficiency and ruggedness, enabling the fast-growing power management needs of consumer electronics, automotive applications, and lighting control applications. Its low static drive current and typical Vgs of 7V make it an ideal choice for power conversion and other power management applications.

The SI7804DN-T1-GE3 operates within a wide potential range, from -55°C to +125°C. Its drain-source voltage and drain-gate voltage ratings are 50V and 5V respectively. Its on-state resistance and total gate charge are 1.2Ω and 6.4nC respectively. Additionally, the device features a typical rise/fall time of 8/8ns, and its current handling capacity is rated at 2A, making it suitable for driving high current loads.

The SI7804DN-T1-GE3 is comprised of a depletion-mode (normally-on) transistor and an enhancement-mode n-channel transistor, designed to support fast switching and low gate control power consumption. When the gate control voltage is floating, the device acts as an open circuit, allowing no current to pass from the drain to the source. When the gate control voltage drops below the internal threshold voltage, the device turns on and allows current to flow between the drain and source.

The device also features a reverse body-diode to protect the circuit from high potentials, while still offering high efficiency and ruggedness to ensure minimal power dissipation during operation. Additionally, the device is protected from short-circuit events by its built-in short-circuit protection feature, which reduces the till gate current and limits the on-state voltage during the short-circuit event.

Finally, the SI7804DN-T1-GE3 is a popular choice for applications such as power converters, power switching, automotive lighting control, and power supplies. It is an ideal choice for applications that require high efficiency and ruggedness, as well as minimal gate control power consumption. Overall, the SI7804DN-T1-GE3 is an excellent choice for a wide array of power management applications.

The specific data is subject to PDF, and the above content is for reference

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