
Allicdata Part #: | SI7804DN-T1-GE3-ND |
Manufacturer Part#: |
SI7804DN-T1-GE3 |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 6.5A 1212-8 |
More Detail: | N-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount Po... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.36515 |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Package / Case: | PowerPAK® 1212-8 |
Supplier Device Package: | PowerPAK® 1212-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.5W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 18.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7804DN-T1-GE3 is a single-channel high-side N-channel enhancement-mode transistor designed for power switching applications. It is specifically designed to provide high efficiency and ruggedness, enabling the fast-growing power management needs of consumer electronics, automotive applications, and lighting control applications. Its low static drive current and typical Vgs of 7V make it an ideal choice for power conversion and other power management applications.
The SI7804DN-T1-GE3 operates within a wide potential range, from -55°C to +125°C. Its drain-source voltage and drain-gate voltage ratings are 50V and 5V respectively. Its on-state resistance and total gate charge are 1.2Ω and 6.4nC respectively. Additionally, the device features a typical rise/fall time of 8/8ns, and its current handling capacity is rated at 2A, making it suitable for driving high current loads.
The SI7804DN-T1-GE3 is comprised of a depletion-mode (normally-on) transistor and an enhancement-mode n-channel transistor, designed to support fast switching and low gate control power consumption. When the gate control voltage is floating, the device acts as an open circuit, allowing no current to pass from the drain to the source. When the gate control voltage drops below the internal threshold voltage, the device turns on and allows current to flow between the drain and source.
The device also features a reverse body-diode to protect the circuit from high potentials, while still offering high efficiency and ruggedness to ensure minimal power dissipation during operation. Additionally, the device is protected from short-circuit events by its built-in short-circuit protection feature, which reduces the till gate current and limits the on-state voltage during the short-circuit event.
Finally, the SI7804DN-T1-GE3 is a popular choice for applications such as power converters, power switching, automotive lighting control, and power supplies. It is an ideal choice for applications that require high efficiency and ruggedness, as well as minimal gate control power consumption. Overall, the SI7804DN-T1-GE3 is an excellent choice for a wide array of power management applications.
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