SI7880ADP-T1-GE3

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The SI7880ADP-T1-GE3 is a single-channel, 3V Power MOSFET with ESD protection. This device is designed to be used in low voltage systems, such as those used in motor control, lighting control, and smart power supplies.

The SI7880ADP-T1-GE3 is a single n-channel MOSFET that features low on-resistance, low gate charge, and low gate-drain capacitance. This device is a well-suited for switching purposes in medium and high current applications. It is available in a 7-pin mini-SOP package and uses an “L” body layout.

The device is constructed using advanced PowerMOS technology, which makes it highly reliable and efficient. It is based on a conventional DMOS transistor architecture, with the addition of self-protecting features such as a reverse-parallel Schottky diode and a low resistance N-channel MOSFET in series. This feature helps to protect the device against overvoltage, overcurrent and ESD damage.

The SI7880ADP-T1-GE3 is characterised by its low on-resistance, low gate charge and low gate-drain capacitance. It is an ideal choice for medium and high current applications. It is suitable for use in switching circuits, such as motor control, lighting control, and power supply regulation. The device also has zero-temperature coefficient and its maximum operating junction temperature is 175°C.

In terms of working principle, the SI7880ADP-T1-GE3 contains an integrated n-channel FET as the active device. When the gate drive voltage is above the set threshold voltage of the device, the n-channel FET is turned on and the device is enabled. When the gate voltage is below the threshold value, the device is disabled and no current can flow through it. The reverse-parallel Schottky diode is used to protect the device against overvoltage and overcurrent. The low-resistance N-channel MOSFET, which is in series with the FET, is used to protect the device against ESD damage.

In conclusion, the SI7880ADP-T1-GE3 is a single-channel, 3V Power MOSFET, designed for low voltage systems such as motor control, lighting control and smart power supplies. It has a low on-resistance and gate-drain capacitance and is based on a conventional DMOS transistor architecture. The device has an integrated low-resistance N-channel MOSFET and reverse-parallel Schottky diode and is protected against overvoltage, overcurrent and ESD damage. This device is an ideal choice for medium and high current applications and its maximum operating junction temperature is 175°C.

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