Allicdata Part #: | SI7856ADP-T1-E3-ND |
Manufacturer Part#: |
SI7856ADP-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 15A PPAK SO-8 |
More Detail: | N-Channel 30V 15A (Ta) 1.9W (Ta) Surface Mount Pow... |
DataSheet: | SI7856ADP-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 4.5V |
Vgs (Max): | ±20V |
FET Feature: | -- |
Power Dissipation (Max): | 1.9W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SO-8 |
Package / Case: | PowerPAK® SO-8 |
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The SI7856ADP-T1-E3 FET is a single, low-power N-channel MOSFET that can be used in a wide range of applications. Designed to meet a variety of requirements in industrial, consumer, commercial, and military applications, the SI7856ADP-T1-E3 offers a number of features that make it especially suitable for tasks that involve high-speed switching and low-power applications. Its features include low on-resistance, low gate charge, and fast switching.
In addition to its wide range of applications, the SI7856ADP-T1-E3 can be used in a variety of circuits and systems. Its low-power design enables the FET to be used in low-power or battery-powered applications, where its low on-resistance helps minimize current draw. In addition, its fast switching times make it well-suited for high-frequency applications, such as in high-speed switching circuits and communication systems.
The ability to handle low-power applications and high-frequency applications makes the SI 7856ADP-T1-E3 an ideal choice for many kinds of circuits and systems. These include power management, audio power amplifiers, low-voltage power supplies, motor control, and switching power controllers.
The key to the SI 7856ADP-T1-E3’s functionality lies in its working principle. The FET is a three-terminal device that operates on the principle of field-effect transistor (FET) amplification. This allows the FET to control the flow of electrical current, by adjusting the size of its gate voltage. As the gate voltage increases or decreases, the FET’s behavior changes and its electrical current is allowed to pass through or blocked, depending on the gate voltage.
In the SI7856ADP-T1-E3, the gate voltage can be controlled via an external voltage source, allowing for precise control of the FET’s behavior. This makes the FET an ideal choice for applications where precise control is required. The FET’s fast switching time also makes it useful for applications involving high frequency signals, such as in audio or other digital systems.
The SI7856ADP-T1-E3 is a versatile FET, offering a wide range of features that make it suitable for many types of applications. Its ability to handle both low- and high-power applications, along with its fast switching times and precise control via external voltages make the SI7856ADP-T1-E3 an excellent choice for a wide range of circuits and systems.
The specific data is subject to PDF, and the above content is for reference
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