SI7858BDP-T1-GE3

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	5W (Ta), 48W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5760pF @ 6V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	84nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	2.5 mOhm @ 15A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	40A (Tc)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The SI7858BDP-T1-GE3 is a single N-channel enhancement mode MOSFET produced by Vishay Siliconix. It is a power transistor designed for high current switching applications, with excellent power dissipation and thermal performance. The SI7858BDP-T1-GE3 also exhibits very low input-capacitance, making it an ideal choice for applications requiring high switching speeds and high current capabilities.

Application Field

The SI7858BDP-T1-GE3 is a common choice for high current switching applications, thanks to its excellent power dissipation and extremely low input-capacitance. As a feature of its N-channel enhancement mode MOSFET design, the device is particularly suited for applications which require high speed switching, such as for lighting and switching power supplies.The SI7858BDP-T1-GE3 is also suitable for use in battery powered systems and applications, such as for DC/DC converters, solar panels and other similar applications. Additionally, it can be used in automotive applications, where it can provide excellent performance even in extreme temperatures.

Working Principle

The SI7858BDP-T1-GE3 is an N-channel enhancement mode MOSFET, meaning that it will remain off until it is exposed to a control signal. When this signal is applied, the MOSFET will begin conducting current, allowing it to act as an electronic switch.The MOSFET can be used in both P-channel, or N-channel mode. In P-channel mode, the MOSFET will turn on when the voltage level of the control signal drops below the threshold voltage, and will turn off when it reaches this voltage level or higher. Alternatively, in N-channel mode the MOSFET will turn on when the voltage level of the control signal exceeds the threshold voltage, and will turn off when it decreases below this level.In both cases, the PWM signal is used to control the amount of current flowing through the device. This is achieved by adjusting the duty cycle of the signal, allowing more or less current to flow when the device is on.

Conclusion

The SI7858BDP-T1-GE3 is a single N-channel enhancement mode MOSFET which is well suited to high speed capacitor-free switching applications. Thanks to its excellent power dissipation, low input-capacitance, and wide temperature range, it is the ideal choice for many automotive, battery-driven and DC/DC converter applications. Its P-channel and N-channel operations, coupled with powerful PWM control, make it extremely versatile in both switching and power modulation.

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