SI7882DP-T1-E3

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The SI7882DP-T1-E3 is a single N-Channel high-speed Field Effect Transistor (FET) with an internal source resistor suitable for high-frequency applications. It is a low-voltage, low-current device specifically designed for operation from power supply voltages up to 15 V and may be used in very high frequency applications up to 1.8 GHz.

The SI7882DP-T1-E3 is a dual-gate FET with two N-channel enhancement type FETs formed in a single substrate. This arrangement allows for the device to be used in various circuits where a high voltage (V ), low frequency (f) or high frequency (f) signal circuit is desired.

The single sides are attracted towards each other by electrostatic force and thereby form an internal gate-source connection. When a voltage is applied to one or both of the gates, the current that can flow through the device increases in proportion to the applied signal. Hence, if we have an amplifier without a signal applied to the gate, we will see the current flowing through the device is comparatively low.

The gate-source signal input is usually fed through an external resistor to ground. As the single source is located in the center of the device, the internal source resistor can be divided into two parts. This circuit configuration controls the gate charge that is necessary to create a high-speed signal.

The two gates of the SI7882DP-T1-E3 are connected to each other through the source resistor. Therefore, when the current passes through the source resistor, it will travel in two directions: from the vertical gate to the horizontal gate and vice versa. This ensures that the biasing of the vertical and horizontal gates is constantly balanced.

The device has a simple design featuring an integrated source resistor and low capacitance resulting in enhanced transconductance. It also has a low-power consumption and its output impedance remains low over a wide range of frequencies.

The SI7882DP-T1-E3 is designed to operate in a wide range of application fields including switched-mode power supplies, switching regulators, switching converters, amplifiers and attenuators, digital logic circuits, electromechanical relays and many more.

The operating principle of the SI7882DP-T1-E3 is to utilize the internal source resistor to control the current flow through the device by applying voltage to the two gates. As the voltage is increased, the current flow increases in proportion to the applied signal. This allows for the appropriate control of the device, enabling it to be used in various circuits where a high voltage, low frequency or high-frequency signal is desired.

In conclusion, the SI7882DP-T1-E3 is a single-gate N-Channel high-speed Field Effect Transistor (FET) with an internal source resistor suitable for high-frequency applications. It is designed for operation from power supply voltages up to 15V and is suitable for use in very high-frequency applications up to 1.8 GHz. As the device has a simple design and low capacitance, it is suitable for operation in numerous applications such as switched-mode power supplies, switching regulators, switching converters, amplifiers and attenuators, digital logic circuits and electromechnical relays.

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