Allicdata Part #: | SI7868ADP-T1-E3TR-ND |
Manufacturer Part#: |
SI7868ADP-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 40A PPAK SO-8 |
More Detail: | N-Channel 20V 40A (Tc) 5.4W (Ta), 83W (Tc) Surface... |
DataSheet: | SI7868ADP-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5.4W (Ta), 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6110pF @ 10V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 2.25 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7868ADP-T1-E3, also known as an enhancement-mode vertical double-diffused metal oxide semiconductor (VMOS) transistor, is a type of field-effect transistor (FET) that is commonly used for power purposes. It can be used for both switching and linear operation, and is suitable for switching up to 200V. It is a low-power FET that can be used in a variety of applications, from communications systems and industrial machines to consumer electronics.
The SI7868ADP-T1-E3 is built primarily with an enhancement-mode VMOS structure. This is a type of FET where the gate is electrically isolated from the source and drain by a dielectric layer. The device itself is composed of three layers: The drains, the source, and the gate.
In operation, the source is connected to the voltage source, while the drain is connected to a load, usually through a resistor. The voltage on the gate will then switch the source-drain current between the load and the source. The ON-state resistance of the device determines the current flow and the OFF-state resistance determines the device\'s threshold voltage, which is the voltage at which the device starts to conduct current. This threshold voltage can be used to control the device\'s turn-on or turn-off times.
In addition to its switching and linear capabilities, the SI7868ADP-T1-E3 can also be used in level-shifting applications. This means that the device can be used to change the logic level of a signal from one logic family to another. For example, it can be used to convert a TTL (transistor-transistor logic) signal to a CMOS (complementary metal-oxide-semiconductor) signal. The device can also be used as an input buffer, for controlling the input signals coming from external sources.
The SI7868ADP-T1-E3 is well-suited for use in a number of different applications. Due to its high frequency performance and low on-resistance, it is commonly used in communications systems and consumer electronics. It is also used in switching power supplies, industrial machines, radiotelephones, and 5G radio systems. Additionally, due to its low threshold voltage and its low input capacitance, it can be used as an input buffer in consumer electronics, computers, and digital equipment.
In conclusion, the SI7868ADP-T1-E3 is a type of enhancement-mode VMOS transistor that is commonly used for power purposes. It can be used for both switching and linear applications, and its features make it well-suited for a variety of applications, from consumer electronics to communications systems and industrial machines. Its high frequency performance and low input capacitance make it useful for input buffering and level-shifting, while its low on-resistance makes it suitable for switching up to 200 volts.
The specific data is subject to PDF, and the above content is for reference
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