SI7884BDP-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI7884BDP-T1-GE3TR-ND

Manufacturer Part#:

SI7884BDP-T1-GE3

Price: $ 0.57
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 40V 58A PPAK SO-8
More Detail: N-Channel 40V 58A (Tc) 4.6W (Ta), 46W (Tc) Surface...
DataSheet: SI7884BDP-T1-GE3 datasheetSI7884BDP-T1-GE3 Datasheet/PDF
Quantity: 6000
1 +: $ 0.57000
10 +: $ 0.55290
100 +: $ 0.54150
1000 +: $ 0.53010
10000 +: $ 0.51300
Stock 6000Can Ship Immediately
$ 0.57
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4.6W (Ta), 46W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7884BDP-T1-GE3 is an N-Channel enhancement-type metal-oxide-semiconductor field-effect transistor (MOSFET). It is an ideal choice for various commercial applications requiring a low-voltage, fast-switching, low-on-resistance power switch. This MOSFET is part of the FETs family and specifically falls in the single category of transistors.

The SI7884BDP-T1-GE3 can be used as a voltage regulator in various electronic circuits such as small motors, power supplies, and audio amplifiers. It is also used in RF switches and switching regulators. This MOSFET is often employed where large current is required, such as in switching applications, DC-DC converters, and motor control circuits.

The SI7884BDP-T1-GE3 is designed with an N-Channel enhancement-type structure. This MOSFET works according to the principle of a charge carrier flowing between its source and drain terminals when there is a voltage difference between them. When the drain-to-source voltage exceeds the threshold voltage, a conducting channel is created. This enables current to flow to the drain terminal and make the MOSFET turn “on”.

When the source-to-drain voltage is higher than the threshold voltage, the device turns “off”, and no current flows. This MOSFET also comes with a number of integrated protection features, such as over-temperature protection, current limiting, and voltage protection.

The SI7884BDP-T1-GE3 is an ideal choice for a variety of commercial applications. It is designed to provide superior switching performance, low power loss, and maximum operational stability. This MOSFET can be used in applications where the operating voltage range is between -6V to 6V, and the operating temperature range is between -55°C to 175°C.

In summary, the SI7884BDP-T1-GE3 is an N-Channel enhancement-type MOSFET that falls under the single category of transistors. It is designed to provide superior switching performance, low power loss, and maximum operational stability. This MOSFET is often used in various power switching applications, DC-DC converters, and motor control circuits.

The specific data is subject to PDF, and the above content is for reference

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