
Allicdata Part #: | SI7884BDP-T1-GE3TR-ND |
Manufacturer Part#: |
SI7884BDP-T1-GE3 |
Price: | $ 0.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 58A PPAK SO-8 |
More Detail: | N-Channel 40V 58A (Tc) 4.6W (Ta), 46W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 6000 |
1 +: | $ 0.57000 |
10 +: | $ 0.55290 |
100 +: | $ 0.54150 |
1000 +: | $ 0.53010 |
10000 +: | $ 0.51300 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4.6W (Ta), 46W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3540pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 77nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 58A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI7884BDP-T1-GE3 is an N-Channel enhancement-type metal-oxide-semiconductor field-effect transistor (MOSFET). It is an ideal choice for various commercial applications requiring a low-voltage, fast-switching, low-on-resistance power switch. This MOSFET is part of the FETs family and specifically falls in the single category of transistors.
The SI7884BDP-T1-GE3 can be used as a voltage regulator in various electronic circuits such as small motors, power supplies, and audio amplifiers. It is also used in RF switches and switching regulators. This MOSFET is often employed where large current is required, such as in switching applications, DC-DC converters, and motor control circuits.
The SI7884BDP-T1-GE3 is designed with an N-Channel enhancement-type structure. This MOSFET works according to the principle of a charge carrier flowing between its source and drain terminals when there is a voltage difference between them. When the drain-to-source voltage exceeds the threshold voltage, a conducting channel is created. This enables current to flow to the drain terminal and make the MOSFET turn “on”.
When the source-to-drain voltage is higher than the threshold voltage, the device turns “off”, and no current flows. This MOSFET also comes with a number of integrated protection features, such as over-temperature protection, current limiting, and voltage protection.
The SI7884BDP-T1-GE3 is an ideal choice for a variety of commercial applications. It is designed to provide superior switching performance, low power loss, and maximum operational stability. This MOSFET can be used in applications where the operating voltage range is between -6V to 6V, and the operating temperature range is between -55°C to 175°C.
In summary, the SI7884BDP-T1-GE3 is an N-Channel enhancement-type MOSFET that falls under the single category of transistors. It is designed to provide superior switching performance, low power loss, and maximum operational stability. This MOSFET is often used in various power switching applications, DC-DC converters, and motor control circuits.
The specific data is subject to PDF, and the above content is for reference
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