| Allicdata Part #: | SI7818DN-T1-E3TR-ND |
| Manufacturer Part#: |
SI7818DN-T1-E3 |
| Price: | $ 0.83 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 150V 2.2A 1212-8 |
| More Detail: | N-Channel 150V 2.2A (Ta) 1.5W (Ta) Surface Mount P... |
| DataSheet: | SI7818DN-T1-E3 Datasheet/PDF |
| Quantity: | 3000 |
| 1 +: | $ 0.83000 |
| 10 +: | $ 0.80510 |
| 100 +: | $ 0.78850 |
| 1000 +: | $ 0.77190 |
| 10000 +: | $ 0.74700 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | PowerPAK® 1212-8 |
| Supplier Device Package: | PowerPAK® 1212-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.5W (Ta) |
| FET Feature: | -- |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 135 mOhm @ 3.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.2A (Ta) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SI7818DN-T1-E3 is an N-channel enhancement mode MOSFET from the Vishay Semiconductor company. It is a power MOSFET specifically designed to work in automobiles and electronic applications that demand a device that has low on-resistance, low capacitance, and high reliability. The SI7818DN-T1-E3 provides up to 45V drain-source voltage and peak current of 11A. It is a high-efficiency MOSFET that can be used to switch loads of up to 45V, including switching heavy DC loads.
The SI7818DN-T1-E3 has the benefits of both the MOSFET and the P-FET (Metal Oxide Semiconductor Field Effect Transistor). It uses P-FET type structure to reduce on-resistance, while the MOSFET structure provides low capacitance, making it well suited for high-speed applications. It also has an integrated body diode to protect against reverse conduction. In addition, its high transconductance gives it excellent switching performance, making it ideal for switching DC motors and heavy loads.
The SI7818DN-T1-E3 applications include power supply, battery charger, switching regulators, DC/DC converters, HID (High Intensity Discharge) lighting and automotive power control. It can be used as a load-switch, motor-driver, and as a high-side switch for motor driving applications. The low power loss of the device allows for higher efficiency and improved performance of the system.
The SI7818DN-T1-E3 works on the principle of an N-channel enhancement mode MOSFET. It has a N-type structure in which a voltage is applied to the gate terminal which controls the current flowing from the drain to the source. This type of MOSFET has a high-drive capability and low-on resistance which makes them well suited for power applications. It also has a low input capacitance which improves switching performance.
In conclusion, the SI7818DN-T1-E3 is an N-channel enhancement mode MOSFET with low on-resistance, low capacitance, and high reliability. It is specifically designed to work in automobiles, electronic applications, and power supplies. Its low power loss makes it ideal for switching heavy DC loads, motor driving applications, and HID lighting.
The specific data is subject to PDF, and the above content is for reference
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SI7818DN-T1-E3 Datasheet/PDF